IRF7450 International Rectifier, IRF7450 Datasheet

MOSFET N-CH 200V 2.5A 8-SOIC

IRF7450

Manufacturer Part Number
IRF7450
Description
MOSFET N-CH 200V 2.5A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7450

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
170 mOhm @ 1.5A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
2.5A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
39nC @ 10V
Input Capacitance (ciss) @ Vds
940pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7450

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7450PBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7450TR
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7450TRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF7450TRPBF
Quantity:
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Company:
Part Number:
IRF7450TRPBF
Quantity:
10 420
Thermal Resistance
l
l
l
l
Absolute Maximum Ratings
www.irf.com
Applications
Notes  through † are on page 8
Benefits
I
I
I
P
V
dv/dt
T
T
Symbol
R
R
D
D
DM
J
STG
D
GS
@ T
@ T
JL
JA
Effective C
App. Note AN1001)
and Current
@T
High frequency DC-DC converters
Low Gate to Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
Switching Losses
A
A
A
= 25°C
= 70°C
= 25°C
OSS
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation„
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt †
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Drain Lead
Junction-to-Ambient
to Simplify Design (See
Parameter
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
G
S
S
S
V
200V
1
2
3
4
DSS
T o p V ie w
Typ.
300 (1.6mm from case )
–––
–––
HEXFET
0.17 @V
8
7
6
5
-55 to + 150
R
Max.
0.02
DS(on)
± 30
2.5
2.0
2.5
D
D
D
20
11
D
A
A
®
GS
Power MOSFET
max
Max.
= 10V
20
50
IRF7450
SO-8
PD- 93893A
2.5A
Units
Units
W/°C
°C/W
I
V/ns
D
°C
W
A
V
1
2/22/01

Related parts for IRF7450

IRF7450 Summary of contents

Page 1

... Junction-to-Ambient JA Notes  through † are on page 8 www.irf.com SMPS MOSFET V DSS 200V 10V GS @ 10V GS 300 (1.6mm from case ) Typ. ––– „ ––– PD- 93893A IRF7450 ® HEXFET Power MOSFET R max I DS(on 10V 2. SO-8 Max. Units 2.5 2.0 ...

Page 2

... IRF7450 Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ T = 25°C (unless otherwise specified) ...

Page 3

... BOTTOM 5.0V 1 5.0V 0.1 10 100 0.1 Fig 2. Typical Output Characteristics 2 2.0 1.5 1.0 0.5 = 50V 0.0 7.0 7.5 8.0 -60 -40 -20 Fig 4. Normalized On-Resistance IRF7450 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 20µs PULSE WIDTH Tj = 150° Drain-to-Source Voltage (V) 2. 10V ...

Page 4

... IRF7450 10000 0V MHZ C iss = rss = oss = Ciss 1000 Coss Crss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 10  ° 150 0.1 0.2 0.4 0.6 0.8 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage SHORTED 100 1000 0 Fig 6. Typical Gate Charge Vs. ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 10V Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 125 150 ° 10 d(on) Fig 10b. Switching Time Waveforms  Notes: 1. Duty factor Peak 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7450 D.U. µ d(off ...

Page 6

... IRF7450 0.18 0. 10V 0.14 0. Drain Current (A) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. V 50K 12V . D.U. 3mA Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 20V Fig 15a&b. Unclamped Inductive Test circuit and Waveforms 6 0.35 ...

Page 7

... SO-8 Package Details (. (. ( (. SO-8 Part Marking www.irf.com ° (. IRF7450 ILLIM .05 32 .06 88 1 .00 40 .00 98 0.1 0 0.25 B .01 4 .01 8 0.3 6 0.46 C .00 75 .009 8 0.19 0.25 D .18 9 .196 4.80 4.98 E .15 0 .15 7 3.8 1 3. .635 .22 84 .244 0 5.8 0 6.20 K .01 1 ...

Page 8

... IRF7450 SO-8 Tape and Reel 8.1 ( .318 ) 7.9 ( .312 ) ING DIM E NSIO ION ILL (INC & ING SIO ILLIME TER . TLIN IA-48 1 & -54 1. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting T = 25° 73mH 2.5A WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...

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