IRF7523D1TRPBF International Rectifier, IRF7523D1TRPBF Datasheet - Page 3

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IRF7523D1TRPBF

Manufacturer Part Number
IRF7523D1TRPBF
Description
MOSFET N-CH 30V 2.7A MICRO8
Manufacturer
International Rectifier
Series
FETKY™r
Datasheet

Specifications of IRF7523D1TRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
130 mOhm @ 1.7A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
210pF @ 25V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
Micro8™
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7523D1TRPBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
100
100
0.1
0.1
10
10
1
1
3.0
0.1
TOP
BOTTOM 3.0V
V
V
3.5
GS
DS
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
4.0
T = 25°C
J
T = 150°C
4.5
J
1
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
J
DS
Power Mosfet Characteristics
5.0
= 10V
3.0V
5.5
6.0
10
A
A
100
100
0.1
0.1
10
10
1
1
0.4
0.1
TOP
BOTTOM 3.0V
Fig 4. Typical Source-Drain Diode
T = 150°C
J
V
V
SD
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
DS
0.8
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
Forward Voltage
T = 25°C
J
IRF7523D1PbF
1.2
1
20µs PULSE WIDTH
T = 150°C
J
1.6
3.0V
V
GS
= 0V
3
10
2.0
A
A

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