IRF7523D1TRPBF International Rectifier, IRF7523D1TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7523D1TRPBF
• Description: MOSFET N-CH 30V 2.7A MICRO8
• Manufacturer: International Rectifier
• Series: FETKY™r

Specifications of IRF7523D1TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 130 mOhm @ 1.7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 210pF @ 25V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7523D1PbF
4
Fig 7. Typical On-Resistance Vs. Gate
.16
.14
.12
.1
. 8
. 6
2.0
1.5
1.0
0.5
0.0
2
-60
I
D
Fig 5. Normalized On-Resistance
-40
= 1.7A
T , Junction Temperature (°C)
-20
J
5 , Gate-to-Source oltage ( )
Vs. Temperature
0
6
Voltage
20
40
60
1
Power Mosfet Characteristics
80
I
= 2.7
100 120 140 160
V
GS
14
= 10V
A
Fig 6. Typical On-Resistance Vs. Drain
Fig 8. Maximum Safe Operating Area
100
0.1
10
.3
.2
.1
.
1
1
T
T
Single Pulse
A
J
= 25°C
= 150°C
OPERATION IN THIS AREA LIMITED
V
DS
2
, Drain-to-Source Voltage (V)
Current
, Drain Current (A)
BY R
4
VGS = 4.5V
10
DS(on)
www.irf.com
6
VGS = 10V
10µs
100µs
10ms
1ms
8
100
A