2SK1058 Renesas Electronics America, 2SK1058 Datasheet

no-image

2SK1058

Manufacturer Part Number
2SK1058
Description
MOSFET N-CH 160V 7A TO-3P
Manufacturer
Renesas Electronics America
Datasheet

Specifications of 2SK1058

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Drain To Source Voltage (vdss)
160V
Current - Continuous Drain (id) @ 25° C
7A
Input Capacitance (ciss) @ Vds
600pF @ 10V
Power - Max
100W
Mounting Type
Through Hole
Package / Case
TO-3P
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Gate Charge (qg) @ Vgs
-
Vgs(th) (max) @ Id
-
Rds On (max) @ Id, Vgs
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SK1058
Manufacturer:
RENESAS
Quantity:
4 520
Part Number:
2SK1058-E
Manufacturer:
AVX
Quantity:
12 000
Part Number:
2SK1058-E
Manufacturer:
RENESAS
Quantity:
1 644
To our customers,
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Renesas Electronics website:
Old Company Name in Catalogs and Other Documents
http://www.renesas.com
April 1
Renesas Electronics Corporation
st
, 2010

Related parts for 2SK1058

2SK1058 Summary of contents

Page 1

To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...

Page 2

All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...

Page 3

... Silicon N Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SJ160, 2SJ161 and 2SJ162 Features Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diodes Suitable for audio power amplifier ...

Page 4

... Absolute Maximum Ratings Item Drain to source voltage 2SK1056 2SK1057 2SK1058 Gate to source voltage Drain current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value Electrical Characteristics Item Drain to source 2SK1056 breakdown voltage 2SK1057 ...

Page 5

... Main Characteristics Power vs. Temperature Derating 150 100 Case Temperature T Typical Output Characteristics Drain to Source Voltage V Drain to Source Saturation Voltage vs. Drain Current 1.0 0.5 0.2 0.1 0.1 0.2 0.5 1.0 Drain Current I Rev.2.00 Sep 07, 2005 page 100 150 (° ° ...

Page 6

... Input Capacitance vs. Gate Source Voltage 1000 500 200 100 0 –2 –4 –6 Gate to Source Voltage V Switching Time Test Circuit Input µs 50 Ω duty ratio = 1 % Rev.2.00 Sep 07, 2005 page 0.03 0. MHz 0.003 –8 –10 (V) GS Switching Time vs. Drain Current ...

Page 7

... Package Dimensions JEITA Package Code RENESAS Code SC-65 PRSS0004ZE-A 1.6 1.4 Max 5.45 ± 0.5 Ordering Information Part Name 2SK1056-E 360 pcs 2SK1057-E 360 pcs 2SK1058-E 360 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product ...

Page 8

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

Related keywords