2SK1058 Renesas Electronics America, 2SK1058 Datasheet - Page 6

• Manufacturer Part Number: 2SK1058
• Description: MOSFET N-CH 160V 7A TO-3P
• Manufacturer: Renesas Electronics America

Specifications of 2SK1058

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Drain To Source Voltage (vdss): 160V
• Current - Continuous Drain (id) @ 25° C: 7A
• Input Capacitance (ciss) @ Vds: 600pF @ 10V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Gate Charge (qg) @ Vgs: -
• Vgs(th) (max) @ Id: -
• Rds On (max) @ Id, Vgs: -

2SK1056, 2SK1057, 2SK1058
Rev.2.00 Sep 07, 2005 page 4 of 5
PW = 50 µs
duty ratio
1000
= 1 %
500
200
100
0
Gate to Source Voltage V
Input Capacitance vs. Gate
Switching Time Test Circuit
–2
Source Voltage
Input
–4
50 Ω
–6
Output
R
V
f = 1 MHz
500
100
DS
200
L
–8
GS
= 2 Ω
50
20
10
5
= 10 V
0.1
(V)
Switching Time vs. Drain Current
–10
0.2
Drain Current I
20 V
0.5
1.0
t on
t off
2
D
0.003
0.03
0.01
Output
(A)
3.0
0.3
0.1
Input
1.0
10 k
5
10 %
90 %
t
Forward Transfer Admittance
on
30 k 100 k
10
T
V
I
D
C
DS
= 2 A
Frequency f (Hz)
= 25°C
= 10 V
vs. Frequency
Waveforms
300 k 1 M
3 M
10 M
t
90 %
10 %
off