HAT2200R Renesas Electronics America, HAT2200R Datasheet - Page 7

• Manufacturer Part Number: HAT2200R
• Description: MOSFET N-CH 100V 8A 8-SOP
• Manufacturer: Renesas Electronics America

Specifications of HAT2200R

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 28 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 8A
• Gate Charge (qg) @ Vgs: 32nC @ 10V
• Input Capacitance (ciss) @ Vds: 2300pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Vgs(th) (max) @ Id: -

HAT2200R
Rev.2.00, Apr.05.2004, page 5 of 7
0.0001
20
16
12
0.001
8
4
0
0.01
0.1
10
10 µ
1
Source to Drain Voltage
0.4
Reverse Drain Current vs.
D = 1
0.5
Source to Drain Voltage
10 V
100 µ
0.8
V
Normalized Transient Thermal Impedance vs. Pulse Width
GS
= 0 V, –5 V
1.2
1 m
Pulse Test
V
1.6
SDF
10 m
(V)
2.0
Pulse Width PW (s)
100 m
10
1
8
6
4
2
0
25
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
θ
θ
P
DM
ch - f(t) = s (t) x
ch - f = 83.3°C/W, Ta = 25°C
Maximum Avalanche Energy vs.
Channel Temperature Derating
Channel Temperature Tch (°C)
50
10
γ
PW
T
75
100
θ
100
ch - f
1000
I
V
duty < 0.1 %
Rg > 50 Ω
AP
D =
DD
= 8 A
125
= 50 V
PW
T
10000
150