HAT2200R Renesas Electronics America, HAT2200R Datasheet - Page 8

• Manufacturer Part Number: HAT2200R
• Description: MOSFET N-CH 100V 8A 8-SOP
• Manufacturer: Renesas Electronics America

Specifications of HAT2200R

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 28 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 8A
• Gate Charge (qg) @ Vgs: 32nC @ 10V
• Input Capacitance (ciss) @ Vds: 2300pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Vgs(th) (max) @ Id: -

HAT2200R
Rev.2.00, Apr.05.2004, page 6 of 7
Vin
15 V
Vin
10 V
Avalanche Test Circuit
Switching Time Test Circuit
Vin Monitor
Rg
V
Monitor
50Ω
DS
Rg
D.U.T.
D. U. T
I
Monitor
AP
L
R
V
= 30 V
L
DS
Vout
Monitor
V
DD
0
V
DD
td(on)
Vout
Vin
E
AR
I
Avalanche Waveform
Switching Time Waveform
AP
10%
=
10%
1
2
I
90%
D
tr
L
•
I
AP
2
td(off)
•
V
90%
DSS
V
DSS
V
90%
- V
DS
V
10%
DD
(BR)DSS
t
f