MTP2955V ON Semiconductor, MTP2955V Datasheet - Page 5

• Manufacturer Part Number: MTP2955V
• Description: MOSFET P-CH 60V 12A TO-220AB
• Manufacturer: ON Semiconductor

Specifications of MTP2955V

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 230 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 770pF @ 25V
• Power - Max: 60W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MTP2955VOS

maximum simultaneous drain−to−source voltage and drain
current that a transistor can handle safely when it is forward
biased. Curves are based upon maximum peak junction
temperature and a case temperature (T
repetitive pulsed power limits are determined by using the
thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance−General
Data and Its Use.”
traverse any load line provided neither rated peak current
(I
transition time (t
power averaged over a complete switching cycle must not
exceed (T
in switching circuits with unclamped inductive loads. For
DM
The Forward Biased Safe Operating Area curves define the
Switching between the off−state and the on−state may
A Power MOSFET designated E−FET can be safely used
10
9
8
7
6
5
4
3
2
1
0
) nor rated voltage (V
Figure 8. Gate−To−Source and Drain−To−Source
0
J(MAX)
2
Q1
Q3
4
Voltage versus Total Charge
r
,t
− T
f
) do not exceed 10 ms. In addition the total
6
C
Q
)/(R
T
, TOTAL CHARGE (nC)
8
qJC
Q2
).
10
QT
DSS
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
) is exceeded and the
12
12
10
11
9
8
7
6
5
4
3
2
1
0
0.5
Figure 10. Diode Forward Voltage versus Current
C
14
V
T
J
) of 25°C. Peak
GS
V
= 25°C
GS
V
= 0 V
DS
0.7
16
SAFE OPERATING AREA
V
SD
I
T
D
J
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
= 12 A
= 25°C
18
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0.9
20
30
27
24
21
18
15
12
9
6
3
0
1.1
5
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases non−linearly with an
increase of peak current in avalanche and peak junction
temperature.
drain−to−source avalanche at currents up to rated pulsed
current (I
continuous current (I
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 13). Maximum
energy at currents below rated continuous I
assumed to equal the values indicated.
1000
100
1.3
Although many E−FETs can withstand the stress of
10
1
1
V
I
V
T
D
J
DD
GS
= 12 A
= 25°C
1.5
DM
= 30 V
= 10 V
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
), the energy rating is specified at rated
1.7
t
t
R
d(on)
d(off)
G
t
t
, GATE RESISTANCE (OHMS)
r
f
D
1.9
), in accordance with industry
10
D
can safely be
100