MTP2955V ON Semiconductor, MTP2955V Datasheet - Page 6

• Manufacturer Part Number: MTP2955V
• Description: MOSFET P-CH 60V 12A TO-220AB
• Manufacturer: ON Semiconductor

Specifications of MTP2955V

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 230 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 770pF @ 25V
• Power - Max: 60W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MTP2955VOS

100
1.0
0.1
10
0.1
0.01
1.0
0.1
V
SINGLE PULSE
T
1.0E−05
C
GS
Figure 11. Maximum Rated Forward Biased
= 25°C
= 15 V
D = 0.5
0.2
0.1
0.05
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
SINGLE PULSE
Safe Operating Area
1.0
0.01
1.0E−04
R
THERMAL LIMIT
PACKAGE LIMIT
DS(on)
100 ms
0.02
LIMIT
1 ms
Figure 14. Diode Reverse Recovery Waveform
10 ms
10
I
S
1.0E−03
dc
SAFE OPERATING AREA
Figure 13. Thermal Response
t
p
http://onsemi.com
100
di/dt
t, TIME (s)
t
a
6
1.0E−02
t
rr
t
225
200
175
150
125
100
b
I
75
50
25
S
P
0
(pk)
25
0.25 I
Figure 12. Maximum Avalanche Energy versus
DUTY CYCLE, D = t
S
t
1
50
t
T
2
J
, STARTING JUNCTION TEMPERATURE (°C)
1.0E−01
Starting Junction Temperature
TIME
75
1
/t
2
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
100
J(pk)
qJC
(t) = r(t) R
− T
1.0E+00
C
= P
125
qJC
(pk)
1
R
qJC
(t)
150
I
D
= 12 A
1.0E+01
175