NIF9N05CLT3 ON Semiconductor, NIF9N05CLT3 Datasheet - Page 2
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NIF9N05CLT3
Manufacturer Part Number
NIF9N05CLT3
Description
MOSFET N-CH 52V 2.6A SOT223
Manufacturer
ON Semiconductor
Datasheet
1.NIF9N05CLT3G.pdf
(6 pages)
Specifications of NIF9N05CLT3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
125 mOhm @ 2.6A, 10V
Drain To Source Voltage (vdss)
52V
Current - Continuous Drain (id) @ 25° C
2.6A
Vgs(th) (max) @ Id
2.5V @ 100µA
Gate Charge (qg) @ Vgs
7nC @ 4.5V
Input Capacitance (ciss) @ Vds
250pF @ 35V
Power - Max
1.69W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
NIF9N05CLT3OS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NIF9N05CLT3
Manufacturer:
ON
Quantity:
12 500
Company:
Part Number:
NIF9N05CLT3G
Manufacturer:
ON
Quantity:
30 000
Company:
Part Number:
NIF9N05CLT3G
Manufacturer:
ON
Quantity:
12 500
MOSFET ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
DYNAMIC CHARACTERISTICS
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
Drain−to−Source Breakdown Voltage (Note 3)
Temperature Coefficient (Negative)
Zero Gate Voltage Drain Current
Gate−Body Leakage Current
Gate Threshold Voltage (Note 3)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 3)
Forward Transconductance (Note 3) (V
Input Capacitance
Output Capacitance
Transfer Capacitance
Input Capacitance
Output Capacitance
Transfer Capacitance
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
GS
GS
DS
DS
GS
GS
DS
GS
GS
GS
= 0 V, I
= 0 V, I
= 40 V, V
= 40 V, V
= ±8 V, V
= ±14 V, V
= V
= 3.5 V, I
= 4.0 V, I
= 10 V, I
GS
, I
D
D
D
D
= 1.0 mA, T
= 1.0 mA, T
D
D
GS
GS
DS
= 100 mA)
= 2.6 A)
DS
= 0.6 A)
= 1.5 A)
= 0 V)
= 0 V)
= 0 V, T
= 0 V)
J
J
J
= 125°C)
= −40°C to 125°C)
= 25°C)
Characteristic
DS
= 15 V, I
V
V
DS
DS
D
= 2.6 A)
(T
= 35 V, V
= 25 V, V
f = 10 kHz
f = 10 kHz
J
= 25°C unless otherwise noted)
http://onsemi.com
NIF9N05CL
GS
GS
= 0 V,
= 0 V,
2
V
Symbol
R
V
(BR)DSS
I
C
C
I
DS(on)
C
C
GS(th)
C
C
g
DSS
GSS
FS
oss
oss
rss
rss
iss
iss
50.8
Min
1.3
52
−9.3
1.75
−4.1
Typ
±22
190
165
107
155
170
3.8
55
54
60
25
70
30
Max
59.5
±10
380
200
125
250
100
2.5
59
10
25
40
mV/°C
mV/°C
Mhos
Unit
mW
mA
mA
pF
pF
V
V
V