NIF9N05CLT3 ON Semiconductor, NIF9N05CLT3 Datasheet - Page 4

• Manufacturer Part Number: NIF9N05CLT3
• Description: MOSFET N-CH 52V 2.6A SOT223
• Manufacturer: ON Semiconductor

Specifications of NIF9N05CLT3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 125 mOhm @ 2.6A, 10V
• Drain To Source Voltage (vdss): 52V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 2.5V @ 100µA
• Gate Charge (qg) @ Vgs: 7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 250pF @ 35V
• Power - Max: 1.69W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: NIF9N05CLT3OS

1.7
1.3
0.9
0.7
0.5
1.9
1.5
1.1
0.4
0.3
0.2
0.1
6
4
2
0
0
−50
0
2
I
V
D
Figure 3. On−Resistance vs. Gate−to−Source
GS
1
V
= 2.6 A
−25
DS
Figure 1. On−Region Characteristics
V
Figure 5. On−Resistance Variation with
= 12 V
GS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
2
, GATE−TO−SOURCE VOLTAGE (VOLTS)
4
T
V
J
, JUNCTION TEMPERATURE (°C)
GS
0
3
= 10, 5 & 4 V
25
4
Temperature
6
Voltage
5
50
6
8
75
3.8 V
3.6 V
3.4 V
3.2 V
2.8 V
2.6 V
2.4 V
3 V
TYPICAL PERFORMANCE CURVES
7
100
8
T
10
I
T
J
D
J
= 25°C
= 2 A
125
= 25°C
9
http://onsemi.com
NIF9N05CL
10
150
12
4
1000000
100000
10000
1000
0.12
0.24
0.16
0.08
0.2
6
5
4
3
2
1
0
1
30
1
Figure 4. On−Resistance vs. Drain Current and
V
DS
Figure 6. Drain−to−Source Leakage Current
T
T
V
J
V
≥ 10 V
J
GS
= 25°C
DS
T
= 25°C
J
Figure 2. Transfer Characteristics
, GATE−TO−SOURCE VOLTAGE (VOLTS)
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
2
= 150°C
35
T
2
J
I
= −55°C
D,
DRAIN CURRENT (AMPS)
T
J
Gate Voltage
3
40
= 100°C
3
vs. Voltage
V
V
GS
T
GS
J
= 100°C
= 10 V
= 4 V
4
45
4
5
50
5
6
55
6