NTR2101PT1G ON Semiconductor, NTR2101PT1G Datasheet

MOSFET P-CH 8V 3.7A SOT-23

NTR2101PT1G

Manufacturer Part Number
NTR2101PT1G
Description
MOSFET P-CH 8V 3.7A SOT-23
Manufacturer
ON Semiconductor
Type
Small Signalr
Datasheets

Specifications of NTR2101PT1G

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
52 mOhm @ 3.5A, 4.5V
Drain To Source Voltage (vdss)
8V
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 4.5V
Input Capacitance (ciss) @ Vds
1173pF @ 4V
Power - Max
960mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.052 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
9 S
Drain-source Breakdown Voltage
8 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
3.7 A
Power Dissipation
960 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.052Ohm
Drain-source On-volt
8V
Gate-source Voltage (max)
±8V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Continuous Drain (id) @ 25° C
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
NTR2101PT1GOSTR

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NTR2101P
Small Signal MOSFET
−8.0 V, −3.7 A, Single P−Channel, SOT−23
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
© Semiconductor Components Industries, LLC, 2011
April, 2011 − Rev. 5
MAXIMUM RATINGS
THERMAL RESISTANCE RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Power Dissipation
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
Junction−to−Ambient – Steady State
Junction−to−Ambient − t ≤ 5 s
Leading Trench Technology for Low R
−1.8 V Rated for Low Voltage Gate Drive
SOT−23 Surface Mount for Small Footprint (3 x 3 mm)
This is a Pb−Free Device
High Side Load Switch
DC−DC Conversion
Cell Phone, Notebook, PDAs, etc.
(Cu area = 1.127 in sq [1 oz] including traces).
Current (Note 1)
(Note 1)
(1/8″ from case for 10 s)
Parameter
Parameter
(T
J
t ≤ 5 s
= 25°C unless otherwise stated)
t
p
t ≤ 5 s
= 10 ms
T
T
A
A
= 25°C
= 70°C
DS(on)
Symbol
Symbol
V
T
R
R
V
I
P
T
DSS
DM
STG
T
I
I
qJA
qJA
GS
D
S
J
D
L
,
−55 to
Value
−8.0
±8.0
−3.7
−3.0
0.96
−1.2
Max
−11
150
260
160
130
1
°C/W
Unit
Unit
°C
°C
W
V
V
A
A
A
†For information on tape and reel specifications,
NTR2101PT1G
V
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
−8.0 V
(BR)DSS
1
CASE 318
STYLE 21
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
Device
SOT−23
upon manufacturing location.
2
TR7
M
G
ORDERING INFORMATION
G
3
39 mW @ −4.5 V
52 mW @ −2.5 V
79 mW @ −1.8 V
http://onsemi.com
R
(Pb−Free)
= Specific Device Code
= Date Code*
= Pb−Free Package
DS(on)
Package
SOT−23
P−Channel
MARKING DIAGRAM &
PIN ASSIGNMENT
Typ
Publication Order Number:
D
S
Gate
1
TR7 MG
3000/Tape & Reel
Drain
3
G
Shipping
Source
NTR2101P/D
2
I
−3.7 A
D
Max

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NTR2101PT1G Summary of contents

Page 1

... S 260 ° Symbol Max Unit 160 °C/W R qJA R 130 qJA NTR2101PT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com R Typ I Max DS(on −4.5 V −3 −2 − ...

Page 2

ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES AND CAPACITANCES ...

Page 3

V = −2 −6 −2 −2 −V , DRAIN−TO−SOURCE VOLTAGE ...

Page 4

2000 1500 C ISS C 1000 RSS 500 C OSS 0 −4 − −V − GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 1000 V = ...

Page 5

D = 0.5 100 0.2 0.1 0.05 10 0.02 1 0.01 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 TYPICAL CHARACTERISTICS 0.001 0.01 0.1 t, PULSE TIME (s) Figure 12. Thermal Response http://onsemi.com 100 1000 ...

Page 6

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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