NTR2101PT1G ON Semiconductor, NTR2101PT1G Datasheet - Page 3
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NTR2101PT1G
Manufacturer Part Number
NTR2101PT1G
Description
MOSFET P-CH 8V 3.7A SOT-23
Manufacturer
ON Semiconductor
Type
Small Signalr
Specifications of NTR2101PT1G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
52 mOhm @ 3.5A, 4.5V
Drain To Source Voltage (vdss)
8V
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 4.5V
Input Capacitance (ciss) @ Vds
1173pF @ 4V
Power - Max
960mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.052 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
9 S
Drain-source Breakdown Voltage
8 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
3.7 A
Power Dissipation
960 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.052Ohm
Drain-source On-volt
8V
Gate-source Voltage (max)
±8V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Continuous Drain (id) @ 25° C
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
NTR2101PT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTR2101PT1G
Manufacturer:
ON
Quantity:
3 000
Company:
Part Number:
NTR2101PT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NTR2101PT1G
Manufacturer:
ON/安森美
Quantity:
20 000
0.25
0.15
0.05
0.2
0.1
10
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
8
6
4
2
0
0
0
−50
0
I
V
D
GS
Figure 5. On−Resistance Variation with
−25
= −3.7 A
Figure 1. On−Region Characteristics
−V
−V
= −4.5 V
1
Figure 3. On−Resistance versus
DS
GS
T
V
1
V
J
GS
, DRAIN−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Gate−to−Source Voltage
GS
0
= −2.2 V
= −2.4 V
= −2.6 V to −6.0 V
2
Temperature
25
2
3
50
V
V
V
V
GS
GS
GS
GS
3
75
= −2.0 V
= −1.8 V
= −1.4 V
= −1.2 V
4
TYPICAL CHARACTERISTICS
I
T
D
100
J
T
= −3.7 A
J
= 25°C
4
= 25°C
5
http://onsemi.com
125
150
5
6
3
100000
10000
1000
0.08
0.06
0.04
0.02
100
10
8
6
4
2
0
0
0
2
0
Figure 4. On−Resistance versus Drain Current
V
V
Figure 6. Drain−to−Source Leakage Current
V
DS
−V
T
GS
GS
J
DS
≥ −10 V
= 25°C
−V
= 0 V
Figure 2. Transfer Characteristics
= −4.5 V
3
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
GS
, GATE−TO−SOURCE VOLTAGE (V)
1
2
T
T
−I
J
J
= 150°C
D
T
= 100°C
and Gate Voltage
, DRAIN CURRENT (A)
J
4
T
= 150°C
T
versus Voltage
T
J
J
J
= −55°C
= 25°C
= 150°C
T
J
= −55°C
2
5
4
6
3
6
7
4
8
8