MTB50P03HDLG ON Semiconductor, MTB50P03HDLG Datasheet - Page 3
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MTB50P03HDLG
Manufacturer Part Number
MTB50P03HDLG
Description
MOSFET P-CH 30V 50A D2PAK
Manufacturer
ON Semiconductor
Datasheet
1.MTB50P03HDLT4.pdf
(9 pages)
Specifications of MTB50P03HDLG
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
25 mOhm @ 25A, 5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
100nC @ 5V
Input Capacitance (ciss) @ Vds
4900pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MTB50P03HDLG
MTB50P03HDLGOS
MTB50P03HDLGOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MTB50P03HDLG
Manufacturer:
MOT/ON
Quantity:
12 500
0.029
0.027
0.025
0.023
0.021
0.019
0.017
0.015
1.35
1.25
1.15
1.05
0.95
0.85
100
80
60
40
20
− 50
0
0
0
Figure 3. On−Resistance versus Drain Current
V
T
GS
V
I
D
J
GS
0.2
− 25
= 25°C
= 25 A
= 5 V
Figure 5. On−Resistance Variation with
Figure 1. On−Region Characteristics
= 5 V
V
20
0.4
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T
0
J
, JUNCTION TEMPERATURE (°C)
I
0.6
D
, DRAIN CURRENT (AMPS)
and Temperature
25
40
4.5 V
Temperature
0.8
T
J
− 55°C
= 100°C
25°C
1.0
50
6 V
8 V
TYPICAL ELECTRICAL CHARACTERISTICS
V
GS
60
1.2
= 10 V
75
1.4
100
80
1.6
http://onsemi.com
MTB50P03HDL
125
1.8
3.5 V
2.5 V
5 V
4 V
3 V
100
150
2.0
3
0.022
0.021
0.020
0.019
0.018
0.017
0.016
0.015
1000
100
100
80
60
40
20
10
0
1.5
0
0
V
Figure 4. On−Resistance versus Drain Current
DS
T
V
J
GS
≥ 5 V
= 25°C
1.9
= 0 V
Figure 6. Drain−to−Source Leakage
Figure 2. Transfer Characteristics
5
V
V
DS
GS
20
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Current versus Voltage
2.3
I
D
, DRAIN CURRENT (AMPS)
10
and Gate Voltage
40
2.7
V
GS
10 V
15
= 5 V
3.1
60
T
25°C
J
20
= − 55°C
3.5
80
T
25
J
3.9
= 125°C
100°C
100°C
4.3
100
30