NTB35N15G ON Semiconductor, NTB35N15G Datasheet

NTB35N15G

Manufacturer Part Number

NTB35N15G

Description

MOSFET N-CH 150V 37A D2PAK

Manufacturer

ON Semiconductor

Datasheet

1.NTB35N15T4G.pdf (8 pages)

Specifications of NTB35N15G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

50 mOhm @ 18.5A, 10V

Drain To Source Voltage (vdss)

150V

Current - Continuous Drain (id) @ 25° C

37A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

100nC @ 10V

Input Capacitance (ciss) @ Vds

3200pF @ 25V

Power - Max

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTB35N15G

Manufacturer:

Quantity:

12 500

Current page: 1 of 8
Download datasheet (81Kb)

NTB35N15

Power MOSFET

37 Amps, 150 Volts

N−Channel Enhancement−Mode D

Features

•

Typical Applications

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. When surface mounted to an FR4 board using the minimum recommended

2. Pulse Test: Pulse Width = 10 ms, Duty Cycle = 2%.

MAXIMUM RATINGS

August, 2005 − Rev. 5

Drain−to−Source Voltage

Drain−to−Source Voltage (R

Gate−to−Source Voltage

Drain Current

Total Power Dissipation @ T

Derate above 25°C

Total Power Dissipation @ T

Operating and Storage Temperature Range

Single Pulse Drain−to−Source Avalanche

Energy − Starting T

Thermal Resistance

Maximum Lead Temperature for Soldering

Purposes, 1/8 in from case for 10 seconds

L(pk)

Fast Recovery Diode

Source−to−Drain Diode Recovery Time Comparable to a Discrete

Avalanche Energy Specified

Mounting Information Provided for the D

Pb−Free Packages are Available

PWM Motor Controls

Power Supplies

Converters

pad size, (Cu. Area 0.412 in

DSS

= 21.6 A, L = 3.0 mH, R

= 100 Vdc, V

and R

DS(on)

− Junction−to−Case

− Junction−to−Ambient

− Junction−to−Ambient (Note 1)

− Continuous @ T

− Pulsed (Note 2)

− Continuous

− Non−Repetitive (t

Rating

Specified at Elevated Temperature

= 25°C

= 10 Vdc,

= 25°C unless otherwise noted)

= 25°C

= 25°C (Note 1)

= 1.0 MW)

= 25 W)

= 25°C

= 100°C

v10 ms)

PAK Package

Symbol

GSM

DGR

, T

DSS

qJC

qJA

stg

−55 to

Value

+150

"20

"40

1.43

62.5

150

178

700

260

111

2.0

0.7

PAK

W/°C

°C/W

Unit

Vdc

Adc

°C

NTB35N15

NTB35N15G

NTB35N15T4

NTB35N15T4G

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Device

CASE 418B

37 AMPERES, 150 VOLTS

STYLE 2

35N15

50 mW @ V

ORDERING INFORMATION

PAK

http://onsemi.com

= Device Code

= Assembly Location

= Year

= Work Week

= Pb−Free Package

N−Channel

(Pb−Free)

Package

PAK

Publication Order Number:

MARKING DIAGRAM

& PIN ASSIGNMENT

Gate

= 10 V

35N15G

AYWW

Drain

800 Tape & Reel

50 Units/Rail

Shipping

NTB35N15/D

Source

†

Related parts for NTB35N15G

NTB35N15G Summary of contents

Page 1

... AS °C/W Device R 0.7 qJC R 62.5 qJA NTB35N15 50 R qJA NTB35N15G °C T 260 L NTB35N15T4 NTB35N15T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com 37 AMPERES, 150 VOLTS ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage = 250 mAdc Vdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc 150 Vdc 25° ...

Page 3

5 ...

Page 4

Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the ...

Page 5

TOTAL GATE CHARGE (nC) G Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge DRAIN−TO−SOURCE DIODE CHARACTERISTICS 40 ...

Page 6

SINGLE PULSE T = 25°C C 100 LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 0.1 0.1 1 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased Safe Operating ...

Page 7

... PL 0.13 (0.005 VARIABLE CONFIGURATION ZONE VIEW W−W VIEW W−W 1 10.66 0.42 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTB35N15 PACKAGE DIMENSIONS 2 D PAK CASE 418B−04 ISSUE ...

Page 8

... Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com NTB35N15 N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 8 ON Semiconductor Website: http://onsemi ...

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