NTB35N15G ON Semiconductor, NTB35N15G Datasheet - Page 3

• Manufacturer Part Number: NTB35N15G
• Description: MOSFET N-CH 150V 37A D2PAK
• Manufacturer: ON Semiconductor

Specifications of NTB35N15G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 50 mOhm @ 18.5A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 37A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 3200pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.08
0.06
0.04
0.02
2.25
1.75
1.25
0.75
0.25
0.1
2.5
2.0
1.5
1.0
0.5
70
60
40
30
20
10
50
0
0
0
−50
0
0
V
Figure 3. On−Resistance versus Drain Current
V
GS
GS
−25
V
I
V
1
D
Figure 5. On−Resistance Variation with
DS
GS
= 9 V
V
10
= 18.5 A
= 10 V
Figure 1. On−Region Characteristics
GS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
= 10 V
T
2
= 10 V
J
, JUNCTION TEMPERATURE (°C)
I
0
D
20
, DRAIN CURRENT (AMPS)
3
T
T
T
and Temperature
25
J
J
J
Temperature
V
= 100°C
= −55°C
4
= 25°C
GS
30
V
= 6 V
GS
50
5
V
GS
= 7 V
V
40
GS
= 8 V
6
75
= 5.5 V
7
50
100
V
V
V
GS
GS
GS
T
8
J
= 4.5 V
= 25°C
60
= 5 V
= 4 V
125
http://onsemi.com
9
NTB35N15
150
10
70
3
10,000
0.055
0.045
0.035
0.05
0.04
0.03
1000
100
60
50
40
30
20
10
70
10
0
0
2
30
Figure 4. On−Resistance versus Drain Current
V
T
Figure 6. Drain−to−Source Leakage Current
V
GS
J
40
DS
V
= 25°C
V
10
GS
= 0 V
DS
≥ 10 V
Figure 2. Transfer Characteristics
50
, GATE−TO−SOURCE VOLTAGE (VOLTS)
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
3
I
60
D
20
, DRAIN CURRENT (AMPS)
T
and Gate Voltage
70
J
= 100°C
versus Voltage
4
V
30
T
T
80
GS
J
J
= 150°C
= 100°C
= 10 V
90
T
V
40
100
J
GS
= −55°C
5
= 15 V
110 120 130 140
T
50
J
= 25°C
6
60
150
70
7