NTD20P06L-1G ON Semiconductor, NTD20P06L-1G Datasheet - Page 2

• Manufacturer Part Number: NTD20P06L-1G
• Description: MOSFET P-CH 60V 15.5A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD20P06L-1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 150 mOhm @ 7.5A, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 15.5A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 5V
• Input Capacitance (ciss) @ Vds: 1190pF @ 25V
• Power - Max: 65W
• Mounting Type: Surface Mount
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.13 Ohms
• Forward Transconductance Gfs (max / Min): 17.5 S
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 15.5 A
• Power Dissipation: 65 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS (Note 4)
DRAIN−SOURCE DIODE CHARACTERISTICS
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%
4. Switching characteristics are independent of operating junction temperatures
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Gate Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Drain−to−Source On−Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Parameter
(T
J
= 25°C unless otherwise noted)
V
V
V
(BR)DSS
Symbol
Q
V
GS(TH)
R
V
t
(BR)DSS
C
t
C
d(OFF)
I
GS(TH)
C
G(TOT)
Q
I
DS(on)
DS(on)
Q
d(ON)
Q
V
g
DSS
GSS
t
OSS
RSS
RR
t
t
ISS
t
t
FS
GS
GD
SD
RR
a
b
r
f
(
(
/T
/T
)
)
J
J
http://onsemi.com
V
V
V
GS
GS
GS
V
V
V
V
V
V
V
V
= 0 V, I
V
I
GS
GS
= 0 V, f = 1 MHz, V
V
V
V
GS
GS
V
V
GS
GS
V
D
GS
DS
V
I
GS
GS
GS
GS
0 V I
GS
DS
D
2
GS
DS
= −7.5 A
= 0 V, d
= 0 V, d
= −5.0 V,
= 5.0 V,
= −5.0 V, V
= −5.0 V, V
= 5.0 V, V
= −60 V
= −15 A, R
= −5.0 V, I
Test Condition
= 0 V,
= 0 V,
= V
= −5.0 V, I
= −10 V, I
= 0 V, I
= 0 V, V
S
I
I
I
D
D
S
DS
= −15 A
= −18 A
= −18 A
= −12 A
, I
IS
IS
15 A
D
/d
/d
D
GS
= −250 mA
G
t
t
D
DD
DD
= −250 mA
D
DS
D
= 100 A/ms,
= 100 A/ms,
= −7.5 A
= 9.1 W
= ±20 V
= −7.5 A
= −15 A
= −48 V,
= −30 V,
= 30 V,
T
T
T
DS
DS
T
T
T
J
J
J
J
J
J
= 150°C
= 150°C
= 150°C
= 25°C
= 25°C
= −25 V
= 25°C
−1.0
Min
−60
0.130
0.143
−1.5
0.13
Typ
−74
−64
740
207
3.1
4.0
7.0
1.5
1.3
66
15
90
28
70
60
39
21
11
11
0.150
±100
1190
Max
−1.0
−2.0
−1.2
−1.9
−10
300
120
180
135
2.5
26
20
50
mV/°C
mV/°C
Units
mA
nA
nC
nC
pF
ns
ns
W
V
V
S
V
V