NTD20P06L-1G ON Semiconductor, NTD20P06L-1G Datasheet - Page 4

• Manufacturer Part Number: NTD20P06L-1G
• Description: MOSFET P-CH 60V 15.5A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD20P06L-1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 150 mOhm @ 7.5A, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 15.5A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 5V
• Input Capacitance (ciss) @ Vds: 1190pF @ 25V
• Power - Max: 65W
• Mounting Type: Surface Mount
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.13 Ohms
• Forward Transconductance Gfs (max / Min): 17.5 S
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 15.5 A
• Power Dissipation: 65 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
100
10
1
1
V
I
V
Figure 9. Resistive Switching Time Variation
D
DD
GS
= −15 A
= −30 V
= −5 V
t
d(off)
R
Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge
versus Gate Resistance
g
t
F
, GATE RESISTANCE (W)
t
d(on)
t
R
2400
2200
2000
1800
1600
1400
1200
1000
6.25
3.75
1.25
800
600
400
200
10
7.5
5.0
2.5
0
0
0
−10
I
D
C
V
C
iss
V
DS
Q
= −15 A
rss
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
DS
gs
= 0 V
−5
Figure 7. Capacitance Variation
−V
Q
GS
4
g
, TOTAL GATE CHARGE (nC)
0
http://onsemi.com
−V
V
GS
DS
VOLTAGE (V)
Q
Q
C
100
C
C
5
= 0 V
GD
G
rss
iss
oss
4
8
10
20
15
10
5
0
0
V
T
J
GS
15
= 25°C
12
Figure 10. Diode Forward Voltage versus
= 0 V
0.25
T
T
−V
J
J
SD
= 25°C
= 25°C
20
, SOURCE−TO−DRAIN VOLTAGE (V)
V
GS
0.5
16
25
60
50
40
30
20
10
0
0.75
Current
1
1.25
1.5
1.75