NTD4815N-1G ON Semiconductor, NTD4815N-1G Datasheet - Page 3

MOSFET N-CH 30V 6.9A IPAK

NTD4815N-1G

Manufacturer Part Number
NTD4815N-1G
Description
MOSFET N-CH 30V 6.9A IPAK
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTD4815N-1G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
15 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6.9A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
6.6nC @ 4.5V
Input Capacitance (ciss) @ Vds
770pF @ 12V
Power - Max
1.26W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTD4815N-1G
Manufacturer:
ON Semiconductor
Quantity:
500
ELECTRICAL CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 4)
DRAIN−SOURCE DIODE CHARACTERISTICS
PACKAGE PARASITIC VALUES
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Source Inductance
Drain Inductance, DPAK
Drain Inductance, IPAK
Gate Inductance
Gate Resistance
Parameter
(T
J
= 25°C unless otherwise specified)
Symbol
t
t
d(OFF)
d(ON)
V
Q
t
R
L
L
L
L
RR
t
t
t
t
SD
a
b
RR
G
r
f
S
D
D
G
http://onsemi.com
V
GS
V
V
I
3
GS
GS
S
I
D
= 0 V, dIS/dt = 100 A/ms,
= 30 A
= 11.5 V, V
= 15 A, R
= 0 V,
Test Condition
T
I
S
A
= 30 A
= 25°C
G
DS
= 3.0 W
= 15 V,
T
T
J
J
= 125°C
= 25°C
Min
0.0164
17.6
18.4
0.92
15.3
2.49
1.88
3.46
Typ
6.3
2.3
1.0
8.7
6.6
2.6
5.5
Max
1.2
Unit
nH
ns
ns
nC
W
V

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