NTD4815N-1G ON Semiconductor, NTD4815N-1G Datasheet - Page 5

• Manufacturer Part Number: NTD4815N-1G
• Description: MOSFET N-CH 30V 6.9A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD4815N-1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6.9A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 6.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 770pF @ 12V
• Power - Max: 1.26W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
1000
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
100
100
1500
1400
1300
1200
1000
1100
10
10
0.1
900
800
700
600
500
400
300
200
100
1
1
0
1
0.1
10
C
C
Figure 11. Maximum Rated Forward Biased
t
t
V
d(on)
iss
rss
d(off)
V
DS
DS
t
t
5
f
Figure 9. Resistive Switching Time
r
V
SINGLE PULSE
T
V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
= 0 V
C
GS
GS
Variation vs. Gate Resistance
Figure 7. Capacitance Variation
R
= 25°C
G
= 20 V
R
THERMAL LIMIT
PACKAGE LIMIT
, GATE RESISTANCE (OHMS)
0
DS(on)
Safe Operating Area
V
C
V
1
GS
rss
DS
= 0 V
5
LIMIT
10
10
15
10
TYPICAL PERFORMANCE CURVES
V
I
V
D
20
DD
GS
= 30 A
T
= 15 V
= 11.5 V
J
10 ms
1 ms
100 ms
10 ms
dc
= 25°C
http://onsemi.com
25
C
C
iss
oss
100
100
30
5
6
5
4
3
2
1
0
0
Figure 8. Gate−To−Source and Drain−To−Source
30
25
20
15
10
70
60
50
40
30
20
10
5
0
0.4
0
25
V
Figure 10. Diode Forward Voltage vs. Current
DS
1
V
Figure 12. Maximum Avalanche Energy vs.
T
Q
GS
J
V
1
= 25°C
0.5
SD
Q
= 0 V
50
G
Voltage vs. Total Charge
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Starting Junction Temperature
, TOTAL GATE CHARGE (nC)
T
2
J
, JUNCTION TEMPERATURE (°C)
0.6
75
3
Q
T
0.7
100
4
Q
2
0.8
5
125
0.9
I
T
D
J
= 30 A
= 25°C
6
V
I
D
150
GS
1.0
= 11 A
7
16
14
12
10
8
6
4
2
0
175
1.1