NTY100N10 ON Semiconductor, NTY100N10 Datasheet - Page 17

• Manufacturer Part Number: NTY100N10
• Description: MOSFET N-CH 100V 123A TO-264
• Manufacturer: ON Semiconductor

Specifications of NTY100N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 123A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 350nC @ 10V
• Input Capacitance (ciss) @ Vds: 10110pF @ 25V
• Power - Max: 313W
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-3BPL
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Product Discontinuance #16140
Issue Date: 20-Aug-2008
EOL Part
MMSZ43T1
MMSZ4679T1
MMSZ4683T1
MMSZ4684T1
MMSZ4685T1
MMSZ4687T1
MMSZ4688T1
MMSZ4689ET1
MMSZ4691T1
MMSZ4692T1
MMSZ4696T1
MMSZ4705T1
MMSZ4711T1
MMSZ4713T1
MMSZ4V3T1
MMSZ5221ET1
MMSZ5226BT1
MMSZ5229BT1
MMSZ5231BT1
MMSZ5250BT1
MMSZ5255BT1
MMSZ5256ET1
MMSZ5258BT1
MMSZ5258BT3
MMSZ5262BT1
MMSZ5265BT1
MMSZ5270BT1
MMSZ56T1
MMSZ6V2T1
MMSZ7V5T1
MMT05A310T3
MMT05B230T3
MMT05B310T3
MMT05B350T3
MMT08B260T3
MMT08B310T3
MMT08B350T3
MMT10B260T3
MMT10B310T3
MMT10B350T3
MUN2131T1
NB100ELT23LDT
NB100LVEP17MN
NB2579ASNR2
NB2669ASNR2
NB2760ASNR2
NB2762ASNR2
NB2769ASNR2
NB2779ASNR2
Suggested Replacement Part
MMSZ43T1G
MMSZ4679T1G
MMSZ4683T1G
MMSZ4684T1G
MMSZ4685T1G
MMSZ4687T1G
MMSZ4688T1G
MMSZ4689ET1G
MMSZ4691T1G
MMSZ4692T1G
MMSZ4696T1G
MMSZ4705T1G
MMSZ4711T1G
MMSZ4713T1G
MMSZ4V3T1G
MMSZ5221ET1G
MMSZ5226BT1G
MMSZ5229BT1G
MMSZ5231BT1G
MMSZ5250BT1G
MMSZ5255BT1G
MMSZ5256ET1G
MMSZ5258BT1G
MMSZ5258BT3G
MMSZ5262BT1G
MMSZ5265BT1G
MMSZ5270BT1G
MMSZ56T1G
MMSZ6V2T1G
MMSZ7V5T1G
MMT05A310T3G
MMT05B230T3G
MMT05B310T3G
MMT05B350T3G
MMT08B260T3G
MMT08B310T3G
MMT08B350T3G
MMT10B260T3G
MMT10B310T3G
MMT10B350T3G
Contact ON Semiconductor for Suggested Replacement
NB100ELT23LDTG
NB100LVEP17MNG
NB2579ASNR2G
NB2669ASNR2G
NB2760ASNR2G
NB2762ASNR2G
NB2769ASNR2G
NB2779ASNR2G
Rev.08-24-05
Page 17 of 22