NTY100N10G ON Semiconductor, NTY100N10G Datasheet - Page 3

• Manufacturer Part Number: NTY100N10G
• Description: MOSFET N-CH 100V 123A TO-264
• Manufacturer: ON Semiconductor

Specifications of NTY100N10G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 123A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 350nC @ 10V
• Input Capacitance (ciss) @ Vds: 10110pF @ 25V
• Power - Max: 313W
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-3BPL
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.018
0.016
0.014
0.012
0.008
0.006
0.004
0.002
0.01
200
150
100
2.5
2.0
1.5
1.0
0.5
50
0
0
0
−50
0
0
V
I
V
D
GS
GS
= 50 A
−25
Figure 5. On−Resistance Variation with
Figure 3. On−Resistance versus Drain
= 10 V
= 10 V
Figure 1. On−Region Characteristics
V
DS
2
T
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
0
50
Current and Temperature
V
I
GS
D
V
V
, DRAIN CURRENT (A)
V
GS
= 6.5 V
GS
GS
25
Temperature
4
= 8.0 V
= 7.0 V
= 9.0 V
T = 100°C
T = −55°C
T = 25°C
50
100
V
6
GS
75
= 10 V
V
V
V
V
GS
GS
GS
GS
100
150
T
= 6.0 V
= 5.6 V
= 5.0 V
= 4.6 V
J
8
= 25°C
http://onsemi.com
125
200
150
10
3
1000000
100000
0.0095
0.0085
0.0075
10000
0.009
0.008
1000
200
150
100
100
1.0
50
10
0
0
0
0
T = 25°C
V
V
DS
GS
w 10 V
Figure 2. On−Region Characteristics
= 0 V
V
V
Figure 4. On−Resistance versus Drain
DS
V
GS
Figure 6. Drain−to−Source Leakage
20
2
GS
, DRAIN−TO−SOURCE VOLTAGE (V)
T
, GATE−TO−SOURCE VOLTAGE (V)
50
J
= 10 V
V
= 100°C
T
T
Current and Gate Voltage
GS
J
J
Current versus Voltage
= 100°C
I
= 125°C
D
= 15 V
, DRAIN CURRENT (A)
40
4
100
T
60
6
J
T
= 25°C
J
= −55°C
150
80
8
10
100
20