NTY100N10G ON Semiconductor, NTY100N10G Datasheet - Page 5

• Manufacturer Part Number: NTY100N10G
• Description: MOSFET N-CH 100V 123A TO-264
• Manufacturer: ON Semiconductor

Specifications of NTY100N10G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 123A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 350nC @ 10V
• Input Capacitance (ciss) @ Vds: 10110pF @ 25V
• Power - Max: 313W
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-3BPL
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10000
1000
100
1.0
10
1
V
I
V
D
Figure 9. Resistive Switching Time Variation
DD
GS
= 100 A
= 50 V
= 10 V
t
d(on)
t
f
R
versus Gate Resistance
t
d(off)
G
, GATE RESISTANCE (W)
t
r
20000
16000
12000
10
8000
4000
8.0
6.0
4.0
2.0
10
0
0
0
10
V
C
C
Figure 8. Gate−to−Source and Drain−to−Source
V
DS
iss
rss
Q1
DS
= 0
5
Q3
V
Figure 7. Capacitance Variation
gs
50
http://onsemi.com
Q
Voltage versus Total Charge
0
g
, TOTAL GATE CHARGE (nC)
V
ds
100
Q2
5
Q
5
V
T
GS
100
100
= 0
80
60
40
20
0
10
0
V
T
J
GS
= 25°C
Figure 10. Diode Forward Voltage versus
15
= 0 V
150
V
V
I
T
0.2
GS
DS
J
SD
T
J
= 25°C
C
C
=100 A
, SOURCE−TO−DRAIN VOLTAGE (V)
= 25°C
oss
iss
20
0.4
200
25
100
80
60
40
20
0
Current
0.6
0.8
1