BAP1321-03,115 NXP Semiconductors, BAP1321-03,115 Datasheet - Page 3

• Manufacturer Part Number: BAP1321-03,115
• Description: DIODE PIN 60V 100MA SOD-323
• Manufacturer: NXP Semiconductors
• Type: Attenuator/Switchr

Specifications of BAP1321-03,115

• Package / Case: SC-76, SOD-323, UMD2
• Diode Type: PIN - Single
• Voltage - Peak Reverse (max): 60V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.32pF @ 20V, 1MHz
• Resistance @ If, F: 1.3 Ohm @ 100mA, 100MHz
• Power Dissipation (max): 500mW
• Configuration: Single
• Reverse Voltage: 60 V
• Forward Continuous Current: 100 mA
• Frequency Range: UHF, SHF
• Carrier Life: 0.5 us
• Forward Voltage Drop: 1.1 V at 50 mA
• Maximum Diode Capacitance: 0.32 pF at 20 V
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 1.3 Ohms at 100 mA
• Maximum Series Resistance @ Minimum If: 5 Ohms at 0.5 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 500 mW
• Forward Current: 100mA
• Forward Voltage: 1.1V
• Operating Temperature Classification: Military
• Package Type: SOD-323
• Mounting: Surface Mount
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Pin Count: 2
• Applications Frequency Range: UHF/SHF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1914-2; 934056622115; BAP1321-03 T/R

NXP Semiconductors
CHARACTERISTICS
T
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
2004 Feb 17
V
I
C
r
s
s
s
s
s

L
R
j
R
D
L
S
= 25 C unless otherwise specified.
F
21
21
21
21
21
Silicon PIN diode
d
th(j-s)
SYMBOL
SYMBOL





2
2
2
2
2
forward voltage
reverse leakage current
diode capacitance
diode forward resistance
isolation
insertion loss
insertion loss
insertion loss
insertion loss
charge carrier life time
series inductance
thermal resistance from junction to soldering point
PARAMETER
I
V
V
V
V
f = 100 MHz; note 1
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
when switched from I
R
I
PARAMETER
F
F
F
F
F
F
F
F
F
F
F
F
F
F
R
R
R
R
R
R
R
L
= 50 mA
I
I
I
I
= 0.5 mA; f = 900 MHz
= 0.5 mA; f = 1800 MHz
= 0.5 mA; f = 2450 MHz
= 1 mA; f = 900 MHz
= 1 mA; f = 1800 MHz
= 1 mA; f = 2450 MHz
= 10 mA; f = 900 MHz
= 10 mA; f = 1800 MHz
= 10 mA; f = 2450 MHz
= 100 mA; f = 900 MHz
= 100 mA; f = 1800 MHz
= 100 mA; f = 2450 MHz
= 100 mA; f = 100 MHz
F
F
F
F
= 100 ; measured at I
= 60 V
= 0; f = 1 MHz
= 1 V; f = 1 MHz
= 20 V; f = 1 MHz
= 0; f = 900 MHz
= 0; f = 1800 MHz
= 0; f = 2450 MHz
= 0.5 mA
= 1 mA
= 10 mA
= 100 mA
3
CONDITIONS
F
= 10 mA to I
R
= 3 mA
R
= 6 mA;
0.95

0.4
0.35
0.25
3.4
2.4
1.2
0.85
16.6
11.6
9.2
0.26
0.35
0.44
0.20
0.29
0.38
0.13
0.22
0.32
0.10
0.20
0.29
0.5
1.5
TYP.
VALUE
BAP1321-03
120
Product specification
1.1
100

0.45
0.32
5.0
3.6
1.8
1.3

















MAX.
UNIT
K/W
V
nA
pF
pF
pF




dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
s
nH
UNIT