BAP1321-03,115 NXP Semiconductors, BAP1321-03,115 Datasheet - Page 4

• Manufacturer Part Number: BAP1321-03,115
• Description: DIODE PIN 60V 100MA SOD-323
• Manufacturer: NXP Semiconductors
• Type: Attenuator/Switchr

Specifications of BAP1321-03,115

• Package / Case: SC-76, SOD-323, UMD2
• Diode Type: PIN - Single
• Voltage - Peak Reverse (max): 60V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.32pF @ 20V, 1MHz
• Resistance @ If, F: 1.3 Ohm @ 100mA, 100MHz
• Power Dissipation (max): 500mW
• Configuration: Single
• Reverse Voltage: 60 V
• Forward Continuous Current: 100 mA
• Frequency Range: UHF, SHF
• Carrier Life: 0.5 us
• Forward Voltage Drop: 1.1 V at 50 mA
• Maximum Diode Capacitance: 0.32 pF at 20 V
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 1.3 Ohms at 100 mA
• Maximum Series Resistance @ Minimum If: 5 Ohms at 0.5 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 500 mW
• Forward Current: 100mA
• Forward Voltage: 1.1V
• Operating Temperature Classification: Military
• Package Type: SOD-323
• Mounting: Surface Mount
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Pin Count: 2
• Applications Frequency Range: UHF/SHF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1914-2; 934056622115; BAP1321-03 T/R

NXP Semiconductors
GRAPHICAL DATA
2004 Feb 17
handbook, halfpage
handbook, halfpage
Silicon PIN diode
T
(1) I
(2) I
Diode inserted in series with a 50  stripline circuit
and biased via the analyzer Tee network.
T
Fig.4
j
amb
s 21
= 25 C; f = 100 MHz.
(
−0.2
−0.4
−0.6
−0.8
10
dB
(Ω)
r D
10
F
F
= 25 C.
−1
Fig.2
0
)
10
2
1
= 100 mA.
= 10 mA.
0
−1
Insertion loss (s
function of frequency; typical values.
Forward resistance as a function of
forward current; typical values.
(1)
(3)
(4)
(2)
1
1
(3) I
(4) I
21
F
F

2
= 1 mA.
= 0.5 mA.
) of the diode as a
10
2
I F (mA)
f (GHz)
MLD593
MLD591
10
3
2
4
handbook, halfpage
handbook, halfpage
T
Fig.3
Diode zero biased and inserted in series with a 50  stripline circuit.
T
Fig.5
j
amb
s 21
= 25 C; = 1 MHz.
(
(fF)
dB
500
C d
400
300
200
100
−10
−20
−30
−40
= 25 C.
)
0
0
2
0
0
Diode capacitance as a function of reverse
voltage; typical values.
Isolation (s
of frequency; typical values.
4
1
21

8
2
) of the diode as a function
12
2
BAP1321-03
Product specification
f (GHz)
16
V R (V)
MLD594
MLD592
20
3