PUMH9T/R NXP Semiconductors, PUMH9T/R Datasheet - Page 6

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PUMH9T/R

Manufacturer Part Number
PUMH9T/R
Description
Trans Digital BJT NPN 50V 100mA 6-Pin SOT-363 T/R
Manufacturer
NXP Semiconductors
Type
NPNr
Datasheet

Specifications of PUMH9T/R

Package
6SOT-363
Configuration
Dual
Minimum Dc Current Gain
100@5mA@5V
Peak Dc Collector Current
100 mA
Maximum Collector Emitter Saturation Voltage
0.1@0.25mA@5mA V
Maximum Collector Emitter Voltage
50 V
Maximum Processing Temperature
260 °C
NXP Semiconductors
2004 Apr 14
NPN/NPN resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
Plastic surface-mounted package (TSOP6); 6 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT457
1.1
0.9
A
y
0.013
0.1
A 1
pin 1
index
6
1
0.40
0.25
b p
e
IEC
0.26
0.10
c
D
5
2
3.1
2.7
D
b p
JEDEC
1.7
1.3
E
REFERENCES
0
4
3
0.95
e
w
M
H E
3.0
2.5
B
SC-74
B
JEITA
scale
6
1
0.6
0.2
L p
A
0.33
0.23
Q
A 1
2 mm
0.2
v
PIMH9; PUMH9; PEMH9
0.2
w
H E
E
detail X
PROJECTION
0.1
EUROPEAN
y
L p
Q
A
c
Product data sheet
ISSUE DATE
05-11-07
06-03-16
X
v
M
SOT457
A

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