BC807-40T/R NXP Semiconductors, BC807-40T/R Datasheet - Page 5

• Manufacturer Part Number: BC807-40T/R
• Description: Trans GP BJT PNP 45V 0.5A 3-Pin TO-236AB T/R
• Manufacturer: NXP Semiconductors
• Type: PNPr

Specifications of BC807-40T/R

• Package: 3TO-236AB
• Supplier Package: TO-236AB
• Pin Count: 3
• Minimum Dc Current Gain: 250@100mA@1V|40@500mA@1V
• Maximum Operating Frequency: 80(Min) MHz
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Emitter Saturation Voltage: 0.7@50mA@500mA V
• Maximum Collector Base Voltage: 50 V
• Maximum Collector Emitter Voltage: 45 V
• Maximum Emitter Base Voltage: 5 V

NXP Semiconductors
7. Characteristics
Table 8.
T
[1]
[2]
BC807_BC807W_BC327_6
Product data sheet
Symbol
I
I
h
h
V
V
C
f
CBO
EBO
T
amb
FE
FE
CEsat
BE
c
Pulse test: t
V
= 25
BE
decreases by approximately 2 mV/K with increasing temperature.
°
C unless otherwise specified.
Characteristics
Parameter
collector-base cut-off current
emitter-base cut-off current
DC current gain
DC current gain
collector-emitter saturation
voltage
base-emitter voltage
collector capacitance
transition frequency
p
BC807; BC807W; BC327
BC807-16; BC807-16W;
BC327-16
BC807-25; BC807-25W;
BC327-25
BC807-40; BC807-40W;
BC327-40
≤ 300 μs; δ ≤ 0.02.
Rev. 06 — 17 November 2009
Conditions
I
I
T
I
I
I
I
I
I
f = 1 MHz
I
f = 100 MHz
E
E
C
C
C
C
C
E
C
j
= 0 A; V
= 0 A; V
= 150 °C
= i
= 0 A; V
= −100 mA; V
= −500 mA; V
= −500 mA; I
= −500 mA; V
= −10 mA; V
e
= 0 A; V
CB
CB
EB
= −20 V
= −20 V;
= −5 V
CB
CE
B
CE
CE
CE
= −50 mA
= −10 V;
= −5 V;
BC807; BC807W; BC327
= −1 V
= −1 V
= −1 V
45 V, 500 mA PNP general-purpose transistors
[1]
[1]
[1]
[2]
Min
-
-
-
100
100
160
250
40
-
-
-
80
Typ
-
-
-
-
-
-
-
-
-
-
5
-
© NXP B.V. 2009. All rights reserved.
Max
−100
−5
−100
600
250
400
600
-
−700
−1.2
-
-
Unit
nA
μA
nA
mV
V
pF
MHz
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