BC807-40T/R NXP Semiconductors, BC807-40T/R Datasheet - Page 8

• Manufacturer Part Number: BC807-40T/R
• Description: Trans GP BJT PNP 45V 0.5A 3-Pin TO-236AB T/R
• Manufacturer: NXP Semiconductors
• Type: PNPr

Specifications of BC807-40T/R

• Package: 3TO-236AB
• Supplier Package: TO-236AB
• Pin Count: 3
• Minimum Dc Current Gain: 250@100mA@1V|40@500mA@1V
• Maximum Operating Frequency: 80(Min) MHz
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Emitter Saturation Voltage: 0.7@50mA@500mA V
• Maximum Collector Base Voltage: 50 V
• Maximum Collector Emitter Voltage: 45 V
• Maximum Emitter Base Voltage: 5 V

NXP Semiconductors
BC807_BC807W_BC327_6
Product data sheet
Fig 7.
Fig 9.
V
CEsat
−10
−10
(V)
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
−1
−1
−2
−10
I
Selection -16: Collector-emitter saturation
voltage as a function of collector current;
typical values
I
Selection -40: Collector-emitter saturation voltage as a function of collector current; typical values
C
C
−1
amb
amb
amb
amb
amb
amb
/I
/I
B
B
= 10
= 10
= 150 °C
= 25 °C
= −55 °C
= 150 °C
= 25 °C
= −55 °C
−1
−10
(1)
(3)
(2)
V
−10
−10
−10
CEsat
(V)
−10
−1
−1
−2
−3
−10
2
−1
I
006aaa125
C
(mA)
Rev. 06 — 17 November 2009
−10
−1
3
−10
(1)
(3)
Fig 8.
(2)
V
BC807; BC807W; BC327
−10
−10
−10
CEsat
(V)
(1) T
(2) T
(3) T
45 V, 500 mA PNP general-purpose transistors
−1
−10
−1
−2
−3
−10
I
Selection- 25: Collector-emitter saturation
voltage as a function of collector current;
typical values
2
C
−1
amb
amb
amb
/I
I
006aaa127
C
B
(mA)
= 10
= 150 °C
= 25 °C
= −55 °C
−10
−1
3
−10
(1)
(3)
(2)
−10
© NXP B.V. 2009. All rights reserved.
2
I
006aaa126
C
(mA)
−10
3
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