HSMP-4890-TR1G Avago Technologies US Inc., HSMP-4890-TR1G Datasheet - Page 3
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HSMP-4890-TR1G
Manufacturer Part Number
HSMP-4890-TR1G
Description
DIODE PIN SW LOW INDUCT SOT-23
Manufacturer
Avago Technologies US Inc.
Datasheet
1.HSMP-3890-BLKG.pdf
(13 pages)
Specifications of HSMP-4890-TR1G
Diode Type
PIN - Single
Voltage - Peak Reverse (max)
100V
Current - Max
1A
Capacitance @ Vr, F
0.375pF @ 5V, 1MHz
Resistance @ If, F
2.5 Ohm @ 5mA, 100MHz
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Diode Case Style
SOT-23
Series Resistance @ If
2.5ohm
Peak Reflow Compatible (260 C)
Yes
Capacitance Ct
0.33pF
Leaded Process Compatible
Yes
Forward Current If
1A
Breakdown Voltage
100V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power Dissipation (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HSMP-4890-TR1G
Manufacturer:
AVAGO
Quantity:
550
Part Number:
HSMP-4890-TR1G
Manufacturer:
AVAGO/安华高
Quantity:
20 000
Electrical Specifications, T
T est Conditions
Notes:
1. Package marking code is white.
2. Package is laser marked.
High Frequency (Low Inductance, 500 MHz – 3 GHz) PIN Diodes
T est Conditions
Note:
1. SOT-23 package marking code is white; SOT-323 is laser marked.
Typical Parameters at
3
Part Number
Number
HSMP-
489x
Part
HSMP-
389B
389C
389R
389U
389V
3890
3892
3893
3894
3895
389E
389F
389L
389T
Test Conditions
Part Number
HSMP-
389x
Package
Marking
Code
GA
Package
Marking
[1]
Code
G0
G5
G0
GU
GV
G2
G3
G4
G2
G3
G4
GL
T
S
Z
C
[2]
[2]
[2]
= 25°C
[1]
[1]
[1]
[1]
[1]
[2]
[2]
[2]
[2]
[2]
[2]
C
Configuration
Dual Anode
= 25°C, each diode
Lead
Code
U
0
2
3
4
5
B
C
R
V
E
F
L
T
Configuration
Single
Series
Common Anode
Common Cathode
Unconnected Pair
Single
Series
Common Anode
Common Cathode
Unconnected Trio
Dual Switch Mode
Low Inductance Single
Series-Shunt Pair
High Frequency Series Pair
Series Resistance
f = 100 MHz
I
F
= 1 mA
R
Breakdown
3.8
S
Minimum
Measure
I
(ý)
Voltage
V
R
V
10 µA
R
100
BR
= V
(V)
BR
Resistance
Maximum
I
F
= 5 mA
Series
R
2.5
S
(ý)
Voltage V
Breakdown
Minimum
Measure
I
V
R
Carrier Lifetime
10 µA
R
100
= V
I
F
I
= 10 mA
R
= 6 mA
τ (ns)
200
BR
BR
(V)
Capacitance
f = 1 MHz
V
Typical
C
R
Total
0.33
T
= 5 V
(pF)
Series Resistance
f = 100 MHz
Maximum
I
F
= 5 mA
R
2.5
S
(ý)
Capacitance
Maximum
f = 1 MHz
V
C
0.375
R
Total
T
= 5 V
(pF)
Total Capacitance
0.20 @ 5V
C
Total Capacitance
T
(pF)
Maximum
f = 1 MHz
V
f=500 MHz–
C
R
Inductance
0.30
T
= 5 V
(pF)
Typical
L
3 GHz
Total
T
1.0
(nH)