HSMP-3830-TR2G Avago Technologies US Inc., HSMP-3830-TR2G Datasheet - Page 3

• Manufacturer Part Number: HSMP-3830-TR2G
• Description: DIODE PIN GP 200V SOT-23
• Manufacturer: Avago Technologies US Inc.
• Type: Attenuator/Switchr

Specifications of HSMP-3830-TR2G

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Diode Type: PIN - Single
• Voltage - Peak Reverse (max): 200V
• Current - Max: 1A
• Capacitance @ Vr, F: 0.3pF @ 50V, 1MHz
• Resistance @ If, F: 1.5 Ohm @ 100mA, 100MHz
• Power Dissipation (max): 250mW
• Configuration: Single
• Reverse Voltage: 50 V
• Forward Continuous Current: 1 A
• Termination Style: SMD/SMT
• Carrier Life: 0.5 us
• Maximum Diode Capacitance: 0.3 pF at 50 V
• Maximum Operating Temperature: + 150 C
• Maximum Series Resistance @ Maximum If: 1.5 Ohms at 100 mA
• Maximum Series Resistance @ Minimum If: 20 Ohms at 1 mA
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 250 mW
• Recovery Time: 80 ns
• Operating Temperature Classification: Military
• Package Type: SOT-23
• Mounting: Surface Mount
• Operating Temperature (max): 150C
• Operating Temperature (min): -65C
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Typical Parameters at T
3
Figure 1. Forward Current vs. Forward Voltage.
Figure 4. 2nd Harmonic Input Intercept Point vs.
Diode RF Resistance for Attenuators.
0.01
100
120
110
100
0.1
10
90
80
70
60
50
40
1000
1
0
Diode Mounted as a
Series Attenuator
in a 50 Ohm Microstrip
and Tested at 123 MHz
V
F
0.2
DIODE RF RESISTANCE ()
– FORWARD VOLTAGE (mA)
125C
0.4
100
25C
0.6
–50C
C
= 25°C (unless otherwise noted), Single Diode
0.8
10
1.0
1.2
Figure 5. 2nd Harmonic Input Intercept Point vs.
Forward Bias Current for Switches.
Figure 2. RF Capacitance vs. Reverse Bias.
0.35
0.30
0.25
0.20
0.15
120
115
110
105
100
95
90
85
0
1
Diode Mounted as a
Series Attenuator in a
50 Ohm Microstrip and
Tested at 123 MHz
I
100 MHz
F
1 GHz
– FORWARD BIAS CURRENT (mA)
2
1 MHz
4
REVERSE VOLTAGE (V)
6
8
10 12
10
14
16
18 20
30
Figure 6. Reverse Recovery Time vs. Forward Current
for Various Reverse Voltage.
1000
Figure 3. RF Resistance at 25C vs. Forward Bias Current.
1000
100
0.1
100
10
0.01
10
1
10
I
F
– FORWARD BIAS CURRENT (mA)
HSMP-3830
FORWARD CURRENT (mA)
0.1
1
20
10
V
V
V
R
R
R
= 20V
= 10V
= 5V
100
30