BAR 63-02V E6327 Infineon Technologies, BAR 63-02V E6327 Datasheet - Page 5
![DIODE RF SGL 50V 100MA 50V SC-79](/photos/5/36/53695/bas_3005b-02v_e6327_sml.jpg)
BAR 63-02V E6327
Manufacturer Part Number
BAR 63-02V E6327
Description
DIODE RF SGL 50V 100MA 50V SC-79
Manufacturer
Infineon Technologies
Datasheet
1.BAR_63-03W_E6327.pdf
(16 pages)
Specifications of BAR 63-02V E6327
Package / Case
SC-79
Diode Type
PIN - Single
Voltage - Peak Reverse (max)
50V
Current - Max
100mA
Capacitance @ Vr, F
0.3pF @ 5V, 1MHz
Resistance @ If, F
1 Ohm @ 10mA, 100MHz
Power Dissipation (max)
250mW
Configuration
Single
Reverse Voltage
50 V
Forward Continuous Current
100 mA
Frequency Range
SHF
Carrier Life
0.075 us
Forward Voltage Drop
1.2 V
Maximum Diode Capacitance
0.3 pF at 5 V
Maximum Operating Temperature
+ 125 C
Maximum Series Resistance @ Maximum If
1 Ohms at 10 mA
Maximum Series Resistance @ Minimum If
2 Ohms at 5 mA
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Power Dissipation
250 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAR6302VE6327XT
SP000010162
SP000010162
Forward current I
BAR63-04...BAR63-06
Forward current I
BAR63-03W
mA
mA
120
120
80
60
40
20
80
60
40
20
0
0
0
0
15
15
30
30
45
45
F
F
60
60
=
=
75
75
(T
(T
S
S
90 105 120 °C
90 105 120 °C
)
)
T
T
S
S
150
150
5
Forward current I
BAR63-02V, BAR63-02W
Forward current I
BAR63-04W...BAR63-06W
mA
mA
120
120
80
60
40
20
80
60
40
20
0
0
0
0
15
15
30
30
45
45
F
F
60
60
=
=
75
75
(T
(T
S
S
90 105 120 °C
90 105 120 °C
)
)
2007-04-19
BAR63...
T
T
S
S
150
150