BAR 63-02V E6327 Infineon Technologies, BAR 63-02V E6327 Datasheet - Page 8
![DIODE RF SGL 50V 100MA 50V SC-79](/photos/5/36/53695/bas_3005b-02v_e6327_sml.jpg)
BAR 63-02V E6327
Manufacturer Part Number
BAR 63-02V E6327
Description
DIODE RF SGL 50V 100MA 50V SC-79
Manufacturer
Infineon Technologies
Datasheet
1.BAR_63-03W_E6327.pdf
(16 pages)
Specifications of BAR 63-02V E6327
Package / Case
SC-79
Diode Type
PIN - Single
Voltage - Peak Reverse (max)
50V
Current - Max
100mA
Capacitance @ Vr, F
0.3pF @ 5V, 1MHz
Resistance @ If, F
1 Ohm @ 10mA, 100MHz
Power Dissipation (max)
250mW
Configuration
Single
Reverse Voltage
50 V
Forward Continuous Current
100 mA
Frequency Range
SHF
Carrier Life
0.075 us
Forward Voltage Drop
1.2 V
Maximum Diode Capacitance
0.3 pF at 5 V
Maximum Operating Temperature
+ 125 C
Maximum Series Resistance @ Maximum If
1 Ohms at 10 mA
Maximum Series Resistance @ Minimum If
2 Ohms at 5 mA
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Power Dissipation
250 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAR6302VE6327XT
SP000010162
SP000010162
Insertion loss I
I
BAR63-02L in series configuration, Z = 50
F
= Parameter
dB
-0.2
-0.3
-0.4
0
0
1
L
1 mA
= -|S
5 mA
2
10 mA
21
3
|
2
= (f)
4
GHz
f
6
8
Isolation I
V
BAR63-02L in series configuration, Z = 50
R
= Paramter
dB
-10
-15
-20
-25
-30
0
0
SO
1
= -|S
2
21
|
2
=
3
(f)
0 V
1 V
10 V
4
2007-04-19
BAR63...
GHz
f
6