MBD770DWT1G ON Semiconductor, MBD770DWT1G Datasheet - Page 3

• Manufacturer Part Number: MBD770DWT1G
• Description: DIODE SCHOTTKY DUAL 70V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MBD770DWT1G

• Diode Type: Schottky - 2 Independent
• Voltage - Peak Reverse (max): 70V
• Capacitance @ Vr, F: 1pF @ 20V, 1MHz
• Power Dissipation (max): 120mW
• Package / Case: SC-70-6, SC-88, SOT-363
• Product: Schottky Diodes
• Peak Reverse Voltage: 70 V
• Forward Continuous Current: 0.01 A
• Configuration: Dual Anti Parallel
• Forward Voltage Drop: 1 V @ 0.01 A
• Maximum Reverse Leakage Current: 0.2 uA @ 35 V
• Operating Temperature Range: - 55 C to + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Max: -
• Resistance @ If, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

0.07
0.02
0.05
0.01
1.0
0.7
0.1
0.5
0.2
1.0
0.9
0.8
0.7
0.6
30
0
40
NOISE SOURCE
FIGURE METER
V
H.P. 349A
H.P. 342A
Figure 5. Noise Figure Test Circuit
R
NOISE
UHF
= 3.0 V
50
Figure 1. Reverse Leakage
T
1.0
V
A
R
Figure 3. Capacitance
, AMBIENT TEMPERATURE (°C)
, REVERSE VOLTAGE (VOLTS)
60
70
2.0
80
90
100
IF AMPLIFIER
TYPICAL CHARACTERISTICS
OSCILLATOR
NF = 1.5 dB
f = 30 MHz
MBD110DWT1G
3.0
MBD110DWT1G
DIODE IN
MOUNT
TUNED
LOCAL
110
http://onsemi.com
MBD110DWT1G
120
4.0
130
3
100
1.0
0.1
10
10
11
9
8
7
6
5
4
3
2
1
Note 1 − C
Note 2 − Noise figure measured with diode under test in tuned di-
Note 3 − L
0.3
0.1
T
A
0.2
NOTES ON TESTING AND SPECIFICATIONS
= 85°C
bridge (Boonton Electronics Model 75A or equival-
ent).
ode mount using UHF noise source and local oscillator
(LO) frequency of 1.0 GHz. The LO power is adjusted
for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see
Figure 5.
of a die, using an impedance bridge (Boonton Radio
Model 250A RX Meter).
S
D
0.4
P
is measured on a package having a short instead
LO
and C
Figure 2. Forward Voltage
V
LOCAL OSCILLATOR FREQUENCY = 1.0 GHz
, LOCAL OSCILLATOR POWER (mW)
F
Figure 4. Noise Figure
, FORWARD VOLTAGE (VOLTS)
0.5
T
are measured using a capacitance
0.5
T
A
(Test Circuit Figure 5)
= 25°C
1.0
T
A
= - 40°C
0.6
2.0
MBD110DWT1G
MBD110DWT1G
0.7
5.0
0.8
10