MBD770DWT1G ON Semiconductor, MBD770DWT1G Datasheet - Page 5

• Manufacturer Part Number: MBD770DWT1G
• Description: DIODE SCHOTTKY DUAL 70V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MBD770DWT1G

• Diode Type: Schottky - 2 Independent
• Voltage - Peak Reverse (max): 70V
• Capacitance @ Vr, F: 1pF @ 20V, 1MHz
• Power Dissipation (max): 120mW
• Package / Case: SC-70-6, SC-88, SOT-363
• Product: Schottky Diodes
• Peak Reverse Voltage: 70 V
• Forward Continuous Current: 0.01 A
• Configuration: Dual Anti Parallel
• Forward Voltage Drop: 1 V @ 0.01 A
• Maximum Reverse Leakage Current: 0.2 uA @ 35 V
• Operating Temperature Range: - 55 C to + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Max: -
• Resistance @ If, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

0.001
0.01
2.0
1.6
1.2
0.8
0.4
1.0
0.1
10
0
0
0
MBD770DWT1G
MBD770DWT1G
5.0
T
T
T
A
A
A
= 100°C
= 75°C
= 25°C
10
10
Figure 10. Total Capacitance
Figure 12. Reverse Leakage
V
V
R
R
, REVERSE VOLTAGE (VOLTS)
, REVERSE VOLTAGE (VOLTS)
15
20
20
25
30
30
35
TYPICAL CHARACTERISTICS
f = 1.0 MHz
40
40
http://onsemi.com
MBD770DWT1G
45
50
50
5
500
400
300
200
100
100
1.0
0.1
10
0
0
MBD770DWT1G
MBD770DWT1G
T
0.2
10
A
Figure 11. Minority Carrier Lifetime
= 85°C
KRAKAUER METHOD
0.4
20
Figure 13. Forward Voltage
V
F
I
, FORWARD VOLTAGE (VOLTS)
F
30
, FORWARD CURRENT (mA)
T
T
A
A
40
0.8
= - 40°C
= 25°C
50
60
1.2
70
1.6
80
90
100
2.0