CGH40045F Cree Inc, CGH40045F Datasheet

TRANS 45W RF GAN HEMT 440193 PKG

CGH40045F

Manufacturer Part Number
CGH40045F
Description
TRANS 45W RF GAN HEMT 440193 PKG
Manufacturer
Cree Inc
Datasheet

Specifications of CGH40045F

Mfg Application Notes
Thermal Performance Guide
Transistor Type
HEMT
Frequency
0Hz ~ 4GHz
Gain
14dB @ 2.5GHz
Voltage - Rated
84V
Current Rating
14A
Current - Test
400mA
Voltage - Test
28V
Power - Output
55W
Package / Case
440193
For Use With
CGH40045F-TB - BOARD DEMO AMP CIRCUIT CGH40045
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Other names
CGH40045FE

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CGH40045F
Manufacturer:
Cree Inc
Quantity:
135
Part Number:
CGH40045F-TB
Manufacturer:
RFMD
Quantity:
1 001
CGH40045
45 W, RF Power GaN HEMT
Cree’s CGH40045 is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT). The CGH40045, operating from a 28 volt
rail, offers a general purpose, broadband solution to a variety of RF
and microwave applications. GaN HEMTs offer high efficiency, high
gain and wide bandwidth capabilities making the CGH40045 ideal
for linear and compressed amplifier circuits. The transistor is
available in a flange and pill package.
FEATURES
Up to 4 GHz Operation
16 dB Small Signal Gain at 2.0 GHz
12 dB Small Signal Gain at 4.0 GHz
55 W Typical P
55 % Efficiency at P
28 V Operation
SAT
SAT
Subject to change without notice.
www.cree.com/wireless
APPLICATIONS
2-Way Private Radio
Broadband Amplifiers
Cellular Infrastructure
Test Instrumentation
Class A, AB, Linear amplifiers suitable
for OFDM, W-CDMA, EDGE, CDMA
waveforms
1

Related parts for CGH40045F

CGH40045F Summary of contents

Page 1

CGH40045 Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and ...

Page 2

... Maximum Forward Gate Current Soldering Temperature 1 Screw Torque Thermal Resistance, Junction to Case 2 Case Operating Temperature 2,3 Note: Refer to the Application Note on soldering at 1 Measured for the CGH40045F See also, the Power Dissipation De-rating Curve on Page 8. 3 Electrical Characteristics (T Characteristics Symbol DC Characteristics 1 Gate Threshold Voltage V ...

Page 3

... Typical Performance Simulated Small Signal Gain and Input Return Loss of Gain, Efficiency, and Output Power vs Frequency of the CGH40045F measured in Amplifier Circuit CGH40045- 2.30 2.35 Copyright © 2006-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc ...

Page 4

... Gain and Efficiency vs Output Power of the CGH40045 measured in Amplifier Circuit CGH40045F- Single Tone CW Output Power vs Input Power of the CGH40045 measured in Amplifier Circuit CGH40045F-TB 50 2.5GHz 2.4GHz 45 2.6GHz Copyright © 2006-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc ...

Page 5

Typical Performance Pulsed Gain and Output Power vs Input Power of the CGH40045 measured in an Amplifier Circuit 800 mA, Freq = 3.6 GHz, Pulse Width=200µS, 10% Duty Cycle ...

Page 6

Typical Performance Simulated Maximum Available Gain and K Factor of the CGH40045 Copyright © 2006-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of ...

Page 7

Typical Noise Performance Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CGH40045 Electrostatic Discharge (ESD) Classifications Parameter Human Body Model Charge Device Model Copyright © 2006-2011 Cree, Inc. All rights reserved. The information in this document is ...

Page 8

... Note 1. V Note 2. Optimized for power gain, P Note 3. When using this device at low frequency, series resistors should be used to maintain amplifier stability. CGH40045 Power Dissipation De-rating Curve CGH40045F CW Power Dissipation De-rating Curve Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2). ...

Page 9

CGH40045-TB Demonstration CGH40045-TB Demonstration Note: The device slot is machined to different depths to support either pill or flanged versions Copyright © 2006-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree ...

Page 10

CGH40045-TB Demonstration Designator C1 C2 C4,C11,C17 C6,C13, C19 C7,C14,C20 C8 C10 C15,C21 C5,C12,C18,C30,C31 C16,C22 R2 R1 J2, CGH40045-TB Demonstration Copyright © 2006-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without ...

Page 11

Typical Package S-Parameters for CGH40045 (Small Signal Frequency Mag S11 Ang S11 500 MHz 0.941 -171.75 600 MHz 0.941 -174.07 700 MHz 0.941 -175.88 800 MHz 0.942 -177.39 900 MHz 0.942 -178.70 1.0 GHz ...

Page 12

Typical Package S-Parameters for CGH40045 (Small Signal Frequency Mag S11 Ang S11 500 MHz 0.952 -172.90 600 MHz 0.952 -175.11 700 MHz 0.952 -176.85 800 MHz 0.952 -178.32 900 MHz 0.952 -179.59 1.0 GHz ...

Page 13

... Product Dimensions CGH40045F (Package Type — 440193) Product Dimensions CGH40045P (Package Type — 440206) Copyright © 2006-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 13 CGH40045 Rev 3.2 Cree, Inc ...

Page 14

Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third ...

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