PD54008S-E STMicroelectronics, PD54008S-E Datasheet - Page 6

• Manufacturer Part Number: PD54008S-E
• Description: IC TRANS RF PWR LDMOST PWRSO-10
• Manufacturer: STMicroelectronics

Specifications of PD54008S-E

• Transistor Type: LDMOS
• Frequency: 500MHz
• Gain: 11.5dB
• Voltage - Rated: 25V
• Current Rating: 5A
• Current - Test: 150mA
• Voltage - Test: 7.5V
• Power - Output: 8W
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 5A
• Drain Source Voltage (max): 25V
• Output Power (max): 8W(Min)
• Power Gain (typ)@vds: 11.5dB
• Frequency (max): 1GHz
• Package Type: PowerSO-10RF (Straight lead)
• Pin Count: 4
• Forward Transconductance (typ): 2.5S
• Input Capacitance (typ)@vds: 91@7.5VpF
• Output Capacitance (typ)@vds: 68@7.5VpF
• Reverse Capacitance (typ): 8.5@7.5VpF
• Operating Temp Range: -65C to 165C
• Drain Efficiency (typ): 55%
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 73000mW
• Vswr (max): 20(Min)
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-6714-5; PD54008S-E

Typical performance
4
6/29
Figure 3.
Figure 5.
C (pF)
1000
VGS (NORMALIZED)
1.04
1.02
0.98
0.96
100
10
1
1
-25
0
VDS = 10 V
f = 1 MHz
Typical performance
Capacitance vs. drain voltage
Gate-source voltage vs. case
temperature
0
5
VDS (V)
Tc (°C)
25
10
50
ID = 0.25 A
ID = 1.5 A
ID = 1 A
ID = 3 A
ID = 2 A
Coss
Crss
Doc ID 12271 Rev 2
Ciss
75
15
Figure 4.
Id (A)
3.5
2.5
1.5
0.5
4
3
2
0
1
2.5
Drain current vs. gate-source
voltage
3
3.5
VGS (V)
PD54008-E, PD54008S-E
4
4.5
VDS = 10 V
5