PD54008-PD54008S STMicroelectronics, PD54008-PD54008S Datasheet

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PD54008-PD54008S

Manufacturer Part Number
PD54008-PD54008S
Description
RF POWER TRANSISTORS The LdmoST Plastic FAMILY
Manufacturer
STMicroelectronics
Datasheet
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
DESCRIPTION
The PD54008 is a common source N-Channel, en-
hancement-mode, lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 7V in common source mode at frequencies of
up to 1GHz. PD54008 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS tech-
nology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD54008’s su-
perior linearity performance makes it an ideal so-
lution for portable radio.
The PowerSO-10 plastic package, designed to of-
fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
ABSOLUTE MAXIMUM RATINGS(T
THERMAL DATA
May 2000
V
EXCELLENT THERMAL STABILITY
COMMON SOURCE CONFIGURATION
POUT = 8 W with 10 dB gain @ 500 MHz / 7.5V
NEW RF PLASTIC PACKAGE
Symbol
R
(BR)DSS
P
T
V
DISS
th(j-c)
STG
I
T
GS
D
j
Drain Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (@ Tc = 70
Max. Operating Junction Temperature
Storage Temperature
Junction-Case Thermal Resistance
Parameter
CASE
0
C)
= 25
O
C)
The LdmoST Plastic FAMILY
RF POWER TRANSISTORS
PD54008 - PD54008S
ORDER CODE
PD54008
ORDER CODE
PD54008S
PowerSO-10RF
(Formed Lead)
PowerSO-10RF
-65 to 165
(Straight Lead)
Value
165
1.3
25
73
20
5
BRANDING
XPD54008
BRANDING
XPD54008S
PRELIMINARY DATA
0
Unit
C/W
0
0
W
V
V
A
C
C
1/10

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PD54008-PD54008S Summary of contents

Page 1

... COMMON SOURCE CONFIGURATION POUT = 8 W with 10 dB gain @ 500 MHz / 7.5V NEW RF PLASTIC PACKAGE DESCRIPTION The PD54008 is a common source N-Channel, en- hancement-mode, lateral Field-Effect RF power transistor designed for high gain, broad band commercial and industrial applications. It operates common source mode at frequencies 1GHz. PD54008 boasts the excellent gain, linearity and reliability of ST’ ...

Page 2

... PD54008 - PD54008S ELECTRICAL SPECIFICATION(T CASE STATIC Symbol 25V DSS GSS 150 mA GS( DS(ON 7.5 V ISS 7.5 V OSS GS DS ...

Page 3

... MHz 100 VDS, DRAIN-SOURCE VOLTAGE (V) Gate-Source Voltage vs. Case Temperature 1.04 1. 10V DS 0.96 - Tc, CASE TEMPERATURE ( C) Drain Current vs. Gate Voltage 4 3.5 3 Ciss 2.5 2 Coss 1.5 1 Crss 0 Vgs, GATE-SOURCE VOLTAGE ( 1. .25A = PD54008 - PD54008S V = 10V DS 3.5 4 4.5 5 3/10 ...

Page 4

... PD54008 - PD54008S TYPICAL PERFORMANCE Output Power vs. Input Power 10 480 MHz 8 500MHz 0.5 1 1.5 Pin, INPUT POWER (W) Drain Efficiency vs. Output Power 60 50 500MHz 40 520MHz Pout, OUTPUT POWER (W) Output Power vs. Bias Current ...

Page 5

... 3.5 0 0.2 0.4 Drain Efficiency vs. Output Power 480M =7 =150mA PD54008 - PD54008S 480 MHz 500 MHz 520MHz Idq =150 PD54008S 480 MHz 520MHz 500MHz 150 mA DQ 0.6 0.8 1 1.2 1.4 Pin, INPUT POWER (W) ...

Page 6

... PD54008 - PD54008S TYPICAL PERFORMANCE Return Loss vs. Output Power 0 -10 520 MHz 480 MHz -20 500MHz -30 - Pout, OUTPUT POWER (W) Drain Efficiency vs. Bias Current 70 480MHz 60 500MHz 50 520 MHz 200 400 600 Idq, BIAS CURRENT (mA) Drain Efficency vs. Drain Voltage ...

Page 7

... CHIP CAP C7,C17 1,000pF 100 mil CHIP CAP C5, C10 33pF, 100 mil CHIP CAP L1 56nH, 7 TURN, COILCRAFT N1,N2 TYPE N FLANGE MOUNT CHIP RESISTOR PD54008 - PD54008S R2 1,0k 1W CHIP RESISTOR CHIP RESISTOR Z1 0.471” X 0.080” MICROSTRIP Z2 1.082” X 0.080” MICROSTRIP Z3 0.372” ...

Page 8

... PD54008 - PD54008S TEST CIRCUIT TEST CIRCUIT TEST CIRCUIT TEST CIRCUIT PHOTOMASTER 8/10 6.4 inches ...

Page 9

... PowerSO-10RF (Straight Lead) MECHANICAL DATA PowerSO-10RF (Formed Lead) MECHANICAL DATA PD54008 - PD54008S 9/10 ...

Page 10

... PD54008 - PD54008S Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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