CRF24010PE Cree Inc, CRF24010PE Datasheet - Page 2

• Manufacturer Part Number: CRF24010PE
• Description: 10W RF SIC MESFET PILL 440196
• Manufacturer: Cree Inc

Specifications of CRF24010PE

• Mfg Application Notes: Thermal Performance Guide
• Transistor Type: MESFET
• Frequency: 1.95GHz
• Gain: 15dB
• Voltage - Rated: 120V
• Current Rating: 1.8A
• Noise Figure: 3.1dB
• Current - Test: 500mA
• Voltage - Test: 48V
• Power - Output: 12W
• Package / Case: 440196
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: CRF24010P; CRF24010P

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Electrical Characteristics (T
Notes:
1
2
3
Copyright © 2002-2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Parameter
Drain-source Voltage
Gate to source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Thermal Resistance, Junction to Case
Screw Torque
Soldering Temperature
Characteristics
DC Characteristics
Gate Threshold Voltage
Gate Quiescent Voltage
Zero Gate Voltage Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance
Case Operating Temperature
RF Characteristics
Gain
Power Output at 1 dB Compression
Power Output at 3 dB Compression
Drain Efficiency
Intermodulation Distortion
Minimum Noise Figure
Output Mismatch Stress
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Torque for the 440166 package type.
Drain Efficiency = P
Power Added Efficiency (PAE) = (P
2
CRF24010 Rev 2.0
1
2,3
OUT
/ P
DC
OUT
Symbol
V
VSWR
V
V
IMD
NF
(BR)DSS
P
P
I
G
C
C
C
- P
GS(th)
GS(Q)
g
T
DSS
1dB
3dB
η
GD
SS
DS
GS
m
min
C
3
C
IN
) / P
= 25˚C)
DC
Symbol
I
V
10 : 1
T
V
R
GMAX
Min.
T
T
100
140
T
-12
-30
DSS
STG
1.2
θJC
GS
13
10
15
40
S
J
–
–
–
–
–
–
Typ.
0.45
160
-10
-31
1.5
3.1
2.5
1.9
-9
15
12
17
45
–
–
–
Max.
125
2.1
–
–
–
–
–
–
–
–
–
–
–
–
–
–
-55, +150
-20, +3
Rating
120
255
225
6.0
5.6
60
Units
VDC
VDC
VDC
dBc
mS
˚C
dB
dB
%
pF
pF
pF
W
W
Y
A
Conditions
V
V
V
V
V
V
f = 1950 MHz
V
f = 1950 MHz
V
f = 1950 MHz
V
P
V
f
P
V
f
No damage at all phase angles,
V
f = 1950 MHz, P
V
V
V
1
1
OUT
OUT
DS
DS
DS
GS
DS
DD
DD
DD
DD
DD
DD
DD
DS
DS
DS
= 1950 MHz, f
= 1950 MHz
= 10 V, I
= 48 V, I
= 10 V, V
= 18, I
= 48 V, I
= 48 V, I
= 48 V, I
= 48 V, I
= 48 V, I
= 48 V, I
= 48 V, I
= 48 V, I
= 48 V, V
= 48 V, V
= 48 V, V
= P
= 10W PEP
1dB
D
D
D
= 10 mA
D
DQ
DQ
DQ
DQ
DQ
DQ
DQ
GS
GS
GS
GS
= 0.5 mA
= 400 mA
= 250 mA
= 500 mA,
= 500 mA,
= 500 mA,
= 250 mA, f = 1950 MHz
= 250 mA,
= 500 mA,
= 500 mA,
= 0 V
= -16 V, f = 1 MHz
= -16 V, f = 1 MHz
= -16 V, f = 1 MHz
OUT
2
= 1950.1 MHz,
USA Tel: [phone]
= 10W CW
Units
˚C/W
in-oz
Volts
Volts
mA
www.cree.com/wireless
˚C
˚C
˚C
Fax: [phone]
Durham, NC 27703
4600 Silicon Drive
Cree, Inc.