NE5520379A-T1A-A CEL, NE5520379A-T1A-A Datasheet - Page 7

• Manufacturer Part Number: NE5520379A-T1A-A
• Description: MOSFET LD N-CHAN 3.2V 79A
• Manufacturer: CEL

Specifications of NE5520379A-T1A-A

• Transistor Type: LDMOS
• Frequency: 915MHz
• Gain: 16dB
• Voltage - Rated: 15V
• Current Rating: 1.5A
• Voltage - Test: 3.2V
• Power - Output: 35.5dBm
• Package / Case: 79A
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 15 V
• Gate-source Breakdown Voltage: 5 V
• Continuous Drain Current: 1.5 A
• Power Dissipation: 20 W
• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 2.5 S
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Current - Test: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

APPLICATION CIRCUIT (900 MHz)
NE5520379A PARTS LIST
1
4
2
1
2
1
2
1
2
2
2
1
1
1
2
1
TF-100637
MA101J
MCR03J512
MCH185A180JK
MCH185A4R7CK
MCH185A100DK
MCH185A8R2DK
TAJB475K010R
GRM40X7R104K025BL
GRM40C0G102J050BD
NE5520379A
703401
1250-003
2052-5636-02
FD-100637
RF
IN
J1
GND
RF Input
P1
C11
C3
C9
GATE
+
100637
C5
C13
4.7uF
C6
V
SOURCE
G
R1
C7
10pF
J3
0.1uF
U1
NE55XXX79A-EV
C2, C3
R1
C4, C7
C14
C1, C5
C6
C12, C13
C10, C11
C8, C9
U1
P1
J3, J4
J1, J2
PCB
C4
V
DRAIN
D
1000pF
J4
C12
C14
C1
LEAD ON DRAIN IS LARGER
8.2pF
C2
C8
C10
100pF
TEST CIRCUIT BLK
2-56 X 3/16 PHILLIPS PAN HEAD
CASE 1100 pF CAP MURATA
0603 5.1K OHMS RESISTOR ROHM
0603 18 pF CAP ROHM
0603 4.7 pF CAP ROHM
0603 10 pF CAP ROHM
0603 8.2 pF CAP ROHM
CASE B 4.7 uF CAP ATC
0805 .1 uF CAP MURATA
0805 1000 pF CAP MURATA 6
IC NEC, LD-MOS FET
GROUND LUG CONCORD
FEEDTHRU MURATA
FLANGE MOUNT JACK RECEPTACLE
NE5520379A-EVAL FAB. DRAWING
5KΩ
V
J2
GG
RF
OUT
(+2.0 V)
18pF
NE5520379A
Note:
Use rosin or other material to prevent solder from penetrating
through-holes.
P.C.B. LAYOUT
18pF
V
DD
(+3.1 V)
Drain
16
15
14
13
12
10
11
9
8
7
5
4
3
2
1
100pF
4.7pF
Source
(Units in mm)
79A PACKAGE
1000pF
0.5
10pF
4.0
1.7
6.1
0.1uF 4.7uF
0.5
RF Output
Through hole φ 0.2 × 33
+
Gate