BLF6G27-10G,112 NXP Semiconductors, BLF6G27-10G,112 Datasheet - Page 9
![IC WIMAX 2.7GHZ 2-LDMOST](/photos/5/64/56475/2-ldmost_sot957a_pkg_sml.jpg)
BLF6G27-10G,112
Manufacturer Part Number
BLF6G27-10G,112
Description
IC WIMAX 2.7GHZ 2-LDMOST
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G27-10G112.pdf
(15 pages)
Specifications of BLF6G27-10G,112
Package / Case
SOT957C
Transistor Type
LDMOS
Frequency
2.5GHz
Gain
19dB
Voltage - Rated
65V
Current Rating
3.5A
Current - Test
130mA
Voltage - Test
28V
Power - Output
2W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.256 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
3.5 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934061845112
BLF6G27-10G
BLF6G27-10G
BLF6G27-10G
BLF6G27-10G
NXP Semiconductors
BLF6G27-10_BLF6G27-10G
Product data sheet
Table 10.
f
(GHz)
BLF6G27-10
2.50
2.55
2.60
2.65
2.70
BLF6G27-10G
2.50
2.55
2.60
2.65
2.70
Measured test circuit impedances
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 28 February 2011
BLF6G27-10; BLF6G27-10G
Z
(Ω)
5.32 − j8.61
4.85 − j8.09
4.40 − j7.55
3.98 − j7.00
3.59 − j6.43
5.67 − j13.62
5.06 − j12.79
4.55 − j11.98
4.10 − j11.19
3.71 − j10.43
i
WiMAX power LDMOS transistor
Z
(Ω)
9.46 − j6.99
9.44 − j7.41
9.32 − j7.86
9.10 − j8.31
8.77 − j8.75
10.70 − j7.38
10.61 − j8.00
10.38 − j8.63
10.00 − j9.24
9.49 − j9.79
o
© NXP B.V. 2011. All rights reserved.
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