BLF6G22-45,135 NXP Semiconductors, BLF6G22-45,135 Datasheet - Page 3
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BLF6G22-45,135
Manufacturer Part Number
BLF6G22-45,135
Description
IC BASESTATION DRIVER SOT608A
Manufacturer
NXP Semiconductors
Specifications of BLF6G22-45,135
Package / Case
SOT-608A
Transistor Type
LDMOS
Frequency
2.11GHz
Gain
18.5dB
Voltage - Rated
65V
Current Rating
1.5µA
Current - Test
405mA
Voltage - Test
28V
Power - Output
2.5W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.2 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934060066135
BLF6G22-45 /T3
BLF6G22-45 /T3
BLF6G22-45 /T3
BLF6G22-45 /T3
NXP Semiconductors
6. Characteristics
7. Application information
BLF6G22-45_2
Product data sheet
7.1 Ruggedness in class-AB operation
Table 6.
T
Table 7.
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1 to 64 PDPCH; f
RF performance at V
class-AB production test circuit.
The BLF6G22-45 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
I
Symbol Parameter
V
V
V
I
I
I
g
R
Symbol
P
G
ACPR
Dq
DSS
DSX
GSS
j
fs
D
(BR)DSS
GS(th)
GSq
L(AV)
DS(on)
p
= 25 C per section; unless otherwise specified.
= 405 mA; P
drain-source breakdown
voltage
gate-source threshold voltage
gate-source quiescent voltage V
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
Parameter
average output power
power gain
drain efficiency
adjacent channel power ratio
Characteristics
Application information
L
= 45 W (CW); f = 2170 MHz.
DS
= 28 V; I
Rev. 02 — 21 April 2008
1
= 2112.5 MHz; f
Dq
= 405 mA; T
Conditions
V
V
V
V
V
V
V
V
I
D
2
GS
DS
DS
GS
GS
DS
GS
DS
GS
= 2.5 A
= 2117.5 MHz; f
case
= 10 V; I
= 28 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
Conditions
P
P
P
GS(th)
GS(th)
L(AV)
L(AV)
L(AV)
= 25 C; unless otherwise specified; in a
D
DS
D
D
D
= 2.5 W
= 2.5 W
= 2.5 W
= 0.5 mA
+ 3.75 V;
+ 3.75 V;
DS
= 72 mA
= 300 mA
= 3.5 A
= 28 V
= 0 V
3
= 2162.5 MHz; f
Power LDMOS transistor
Min
-
17.3
10.5
-
BLF6G22-45
Min
65
1.4
1.65
-
-
-
-
-
DS
Typ
2.5
18.5
13
= 28 V;
Typ
-
1.9
2.15
-
12.5
-
5
0.2
© NXP B.V. 2008. All rights reserved.
49
4
= 2167.5 MHz;
Max
-
19.7
-
Max
-
2.4
2.65
1.5
-
150
-
-
46
3 of 10
Unit
W
dB
%
dBc
Unit
V
V
V
A
nA
S
A