BLF6G22-45,112 NXP Semiconductors, BLF6G22-45,112 Datasheet - Page 7

• Manufacturer Part Number: BLF6G22-45,112
• Description: IC BASESTATION DRIVER SOT608A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22-45,112

• Package / Case: SOT-608A
• Transistor Type: LDMOS
• Frequency: 2.11GHz
• Gain: 18.5dB
• Voltage - Rated: 65V
• Current Rating: 1.5µA
• Current - Test: 405mA
• Voltage - Test: 28V
• Power - Output: 2.5W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.2 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 225 C
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 2.5W(Typ)
• Power Gain (typ)@vds: 18.5@28VdB
• Frequency (min): 2GHz
• Frequency (max): 2.2GHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 5S
• Drain Source Resistance (max): 200(Typ)@6.15Vmohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 13%
• Mounting: Screw
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 934060066112; BLF6G22-45; BLF6G22-45

NXP Semiconductors
9. Package outline
Fig 8.
BLF6G22-45_2
Product data sheet
Flanged ceramic package; 2 mounting holes; 2 leads
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
Package outline SOT608A
VERSION
OUTLINE
SOT608A
0.182
0.148
4.62
3.76
A
H
0.285
0.275
7.24
6.99
b
U 2
A
A
0.006
0.004
0.15
0.10
c
IEC
10.21
10.01
0.402
0.394
D
10.29
10.03
0.405
0.395
D 1
10.21
10.01
0.402
0.394
JEDEC
E
U 1
D 1
D
q
b
10.29
10.03
0.405
0.395
REFERENCES
E 1
1
2
Rev. 02 — 21 April 2008
3
0
0.045
0.035
1.14
0.89
F
w 2
15.75
14.73
0.620
0.580
EIAJ
H
scale
M
5
C
C
0.130
0.115
3.30
2.92
M
p
F
B
p
10 mm
0.067
0.053
1.70
1.35
Q
w 1
15.24
0.600
M
q
A
M
20.45
20.19
0.805
0.795
U 1
B
M
PROJECTION
0.390
0.380
EUROPEAN
9.91
9.65
U 2
E 1
Power LDMOS transistor
BLF6G22-45
0.010 0.020
0.25
w 1
c
Q
0.51
w 2
© NXP B.V. 2008. All rights reserved.
ISSUE DATE
01-02-22
02-02-11
E
SOT608A
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