BLA1011-2,112 NXP Semiconductors, BLA1011-2,112 Datasheet - Page 2
![TRANS LDMOS NCH 75V SOT538A](/photos/5/63/56368/568-sot-538a_sml.jpg)
BLA1011-2,112
Manufacturer Part Number
BLA1011-2,112
Description
TRANS LDMOS NCH 75V SOT538A
Manufacturer
NXP Semiconductors
Datasheet
1.BLA1011-2112.pdf
(9 pages)
Specifications of BLA1011-2,112
Transistor Type
LDMOS
Frequency
1.03GHz ~ 1.09GHz
Gain
16dB
Voltage - Rated
75V
Current Rating
2.2A
Current - Test
50mA
Voltage - Test
36V
Power - Output
2W
Package / Case
SOT-538A
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.2 Ohms
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
2.2 A
Power Dissipation
10 W
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Application
Avionics
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
75V
Output Power (max)
2W
Power Gain (typ)@vds
16(Min)@36VdB
Frequency (min)
1.03GHz
Frequency (max)
1.09GHz
Package Type
CDIP SMD
Pin Count
3
Forward Transconductance (typ)
0.5S
Drain Source Resistance (max)
1200(Typ)@10Vmohm
Input Capacitance (typ)@vds
11@26VpF
Output Capacitance (typ)@vds
9@26VpF
Reverse Capacitance (typ)
0.5@26VpF
Operating Temp Range
-65C to 200C
Mounting
Surface Mount
Mode Of Operation
Class-AB
Number Of Elements
1
Power Dissipation (max)
10000mW
Vswr (max)
5
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Details
Other names
934056834112
BLA1011-2
BLA1011-2
BLA1011-2
BLA1011-2
Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flangeless package
(SOT538A) with a ceramic cap. The common source is
connected to the mounting base.
QUICK REFERENCE DATA
RF performance at T
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2003 Nov 19
Pulsed class-AB;
t
BLA1011-2
V
V
I
P
T
T
p
D
SYMBOL
stg
j
High power gain
Easy power control
Excellent ruggedness
Source on mounting base eliminates DC isolators,
reducing common mode inductance.
Avionics applications in the 1030 to 1090 MHz
frequency range.
DS
GS
tot
Avionics LDMOS transistor
TYPE NUMBER
MODE OF OPERATION
= 50 s;
= 2%
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation
storage temperature
junction temperature
h
= 25 C in a common source test circuit.
PARAMETER
NAME
1030 to 1090
(MHz)
f
ceramic surface mounted package; 2 leads
T
h
25 C
2
PINNING - SOT538A
V
(V)
CONDITIONS
36
DS
PACKAGE
DESCRIPTION
PIN
1
2
3
Fig.1 Simplified outline (SOT538A).
Top view
drain
gate
source, connected to mounting base
(W)
P
1
2
2
L
65
MIN.
DESCRIPTION
Product specification
3
75
2.2
10
+150
200
BLA1011-2
15
MAX.
MBK905
(dB)
>16
G
VERSION
SOT538A
p
V
V
A
W
C
C
UNIT