BLA1011-200 NXP Semiconductors, BLA1011-200 Datasheet

MOSFET Power BULK TNS-MICP

BLA1011-200

Manufacturer Part Number
BLA1011-200
Description
MOSFET Power BULK TNS-MICP
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLA1011-200

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.06 Ohms
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 22 V
Power Dissipation
700 W
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Package / Case
SOT-502
Minimum Operating Temperature
- 65 C
Lead Free Status / Rohs Status
 Details
Other names
BLA1011-200,112

Available stocks

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Price
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BLA1011-200
Manufacturer:
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NXP
Quantity:
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Part Number:
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Part Number:
BLA1011-200_BLA1011S-200
Manufacturer:
MINI
Quantity:
1 400
1. Product profile
CAUTION
1.1 General description
1.2 Features
1.3 Applications
200 W LDMOS avionics power transistor for transmitter applications at frequencies from
1030 MHz to 1090 MHz.
Table 1:
RF performance at T
values.
Mode of operation
Pulsed class-AB:
1030 MHz to 1090 MHz
BLA1011-200; BLA1011S-200
Avionics LDMOS transistor
Rev. 08 — 26 October 2005
Typical pulsed class-AB performance at a frequencies from 1030 MHz to 1090 MHz, a
supply voltage of 36 V and an I
High power gain
Easy power control
Excellent ruggedness
Source on mounting flange eliminates DC isolators, reducing common mode
inductance
Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Load power
Gain
Efficiency
Rise time
Fall time
Typical performance
13 dB
50 ns
50 ns
h
45 %
= 25 C in a common source class-AB test circuit; I
200 W
Conditions
t
t
t
p
p
p
= 50 s; = 2 %
= 128 s; = 2 %
= 340 s; = 1 %
Dq
of 150 mA:
V
(V)
36
36
36
DS
P
(W)
200
250
250
L
Product data sheet
G
(dB)
15
14
14
p
Dq
= 150 mA; typical
(%)
50
50
50
D
t
(ns)
35
35
35
r
t
(ns)
6
6
6
f

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BLA1011-200 Summary of contents

Page 1

... BLA1011-200; BLA1011S-200 Avionics LDMOS transistor Rev. 08 — 26 October 2005 1. Product profile 1.1 General description 200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz. Table 1: RF performance at T values. Mode of operation Pulsed class-AB: 1030 MHz to 1090 MHz CAUTION This device is sensitive to ElectroStatic Discharge (ESD) ...

Page 2

... Philips Semiconductors 2. Pinning information Table 2: Pin BLA1011-200 (SOT502A BLA1011S-200 (SOT502B [1] Connected to flange 3. Ordering information Table 3: Type number BLA1011-200 BLA1011S-200 4. Limiting values Table 4: In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol tot T stg T j 9397 750 14634 Product data sheet BLA1011-200 ...

Page 3

... 7.1 Ruggedness in class-AB operation The BLA1011-200 and BLA1011S-200 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 1030 MHz to 1090 MHz at rated load power. DS 9397 750 14634 Product data sheet BLA1011-200; BLA1011S-200 Thermal characteristics Parameter thermal impedance from junction to heatsink T ...

Page 4

... G p (dB 1 150 100 150 1060 MHz Fig 3. Power gain as a function of load power; typical values 9397 750 14634 Product data sheet BLA1011-200; BLA1011S-200 mgw033 80 D (W) (%) 200 250 P ( Fig 2. Load power as a function of drive power; mgw035 200 250 P ( Fig 4 ...

Page 5

... 150 mA Fig 5. Power gain and drain efficiency a functions of frequency; typical values 150 mA Fig 7. Load impedance as a function of frequency (series components); typical values 9397 750 14634 Product data sheet BLA1011-200; BLA1011S-200 mgw037 80 D (%) 1080 1100 f (MHz) = 200 Fig 6. Input Impedance as a function of frequency ...

Page 6

... The components are situated on one side of the copper-clad Duroid Printed-Circuit Board (PCB) with 0.64 mm. The other side is unetched and serves as a ground plane. See Table 8 for list of components. Fig 8. Component layout for 1030 MHz to 1090 MHz test circuit 9397 750 14634 Product data sheet BLA1011-200; BLA1011S-200 Rev. 08 — ...

Page 7

... American Technical Ceramics type 100B or capacitor of same quality. [3] American Technical Ceramics type 700 or capacitor of same quality. 9397 750 14634 Product data sheet BLA1011-200; BLA1011S-200 List of components (see Figure Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor ...

Page 8

... D UNIT 4.72 12.83 20.02 0.15 mm 3.43 12.57 0.08 19.61 0.186 0.505 0.006 0.788 inches 0.495 0.135 0.003 0.772 OUTLINE VERSION IEC SOT502A Fig 9. Package outline SOT502A 9397 750 14634 Product data sheet BLA1011-200; BLA1011S-200 scale 19.96 9.50 9.53 1.14 19.94 5 ...

Page 9

... D UNIT 4.72 12.83 20.02 0.15 mm 3.43 12.57 0.08 19.61 0.186 0.505 0.006 0.788 inches 0.495 0.135 0.003 0.772 OUTLINE VERSION IEC SOT502B Fig 10. Package outline SOT502B 9397 750 14634 Product data sheet BLA1011-200; BLA1011S-200 scale 19.96 9.50 9.53 1.14 19.94 5 ...

Page 10

... Table 9: Acronym I Dq LDMOS RF SMD VSWR 9397 750 14634 Product data sheet BLA1011-200; BLA1011S-200 Abbreviations Description quiescent drain current Laterally Diffused Metal Oxide Semiconductor Radio Frequency Surface Mount Device Voltage Standing Wave Ratio Rev. 08 — 26 October 2005 Avionics LDMOS transistor © Koninklijke Philips Electronics N.V. 2005. All rights reserved. ...

Page 11

... BLA1011-200_5 20010515 BLA1011-200_4 20010417 BLA1011-200_N_3 20010302 BLA1011-200_N_2 20001201 BLA1011-200_N_1 20000906 9397 750 14634 Product data sheet BLA1011-200; BLA1011S-200 Data sheet status Change notice Doc. number Product data sheet - Product specification - Product specification - Product specification - Product specification - Product specifi ...

Page 12

... For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com 9397 750 14634 Product data sheet BLA1011-200; BLA1011S-200 [2] [3] Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. ...

Page 13

... Trademarks Contact information . . . . . . . . . . . . . . . . . . . . 12 BLA1011-200; BLA1011S-200 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice ...

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