BLA1011-200 NXP Semiconductors, BLA1011-200 Datasheet - Page 7

• Manufacturer Part Number: BLA1011-200
• Description: MOSFET Power BULK TNS-MICP
• Manufacturer: NXP Semiconductors

Specifications of BLA1011-200

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 22 V
• Power Dissipation: 700 W
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-502
• Minimum Operating Temperature: - 65 C
• Lead Free Status / Rohs Status: Details
• Other names: BLA1011-200,112

Philips Semiconductors
9397 750 14634
Product data sheet
Table 8:
[1]
[2]
[3]
Component
C1
C2
C3
C4, C7
C5
C6
C8
C9
C10
C11
L1
R1
R2
American Technical Ceramics type 100A or capacitor of same quality.
American Technical Ceramics type 100B or capacitor of same quality.
American Technical Ceramics type 700 or capacitor of same quality.
List of components (see
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
metal film resistor
SMD 0508 resistor
-shaped enamelled 1 mm copper wire
Rev. 08 — 26 October 2005
BLA1011-200; BLA1011S-200
Figure
8)
[1]
[2]
[1]
[1]
[1]
[2]
[1]
[3]
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Value
39 pF
4.3 pF
11 pF
62 pF
100 pF
47 F; 20 V
20 pF
47 pF
1.2 nF
47 F; 63V
301
18
Avionics LDMOS transistor
Dimensions
length = 38 mm
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