BLA1011-200 NXP Semiconductors, BLA1011-200 Datasheet - Page 4

• Manufacturer Part Number: BLA1011-200
• Description: MOSFET Power BULK TNS-MICP
• Manufacturer: NXP Semiconductors

Specifications of BLA1011-200

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohms
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 22 V
• Power Dissipation: 700 W
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-502
• Minimum Operating Temperature: - 65 C
• Lead Free Status / Rohs Status: Details
• Other names: BLA1011-200,112

Philips Semiconductors
9397 750 14634
Product data sheet
Fig 1. Power gain and drain efficiency as functions of
Fig 3. Power gain as a function of load power; typical
(dB)
G
(dB)
G
p
20
15
10
20
16
12
p
5
0
8
4
0
V
load power; typical values
V
values
0
0
DS
DS
= 2 %
= 36 V; I
= 36 V; f = 1060 MHz; t
50
50
G
Dq
I
p
Dq
= 150 mA; f = 1060 MHz; t
= 1.5 A
150 mA
100
100
D
150
150
p
= 50 s; = 2 %
200
200
P
P
mgw033
L
mgw035
L
(W)
p
(W)
= 50 s;
Rev. 08 — 26 October 2005
250
250
80
60
40
20
0
(%)
D
BLA1011-200; BLA1011S-200
Fig 2. Load power as a function of drive power;
Fig 4. Load power and power gain as functions of
(W)
P
(W)
P
250
L
200
150
100
250
200
150
100
L
50
50
0
0
V
typical values
V
t
gate-source voltage; typical values
p
0
0
DS
DS
= 2 %
= 50 s; = 2 %
= 36 V; I
= 36 V; I
1
2
Dq
Dq
= 150 mA; P
= 150 mA; f = 1060 MHz; t
2
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
G
p
Avionics LDMOS transistor
4
P
L
i
3
= 5.5 W; f = 1060 MHz;
6
4
P
V
D
GS
mgw034
mgw036
(W)
p
(V)
= 50 s;
8
5
20
16
12
8
4
0
(dB)
G
p
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