BLF6G38-25,112 NXP Semiconductors, BLF6G38-25,112 Datasheet - Page 11
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BLF6G38-25,112
Manufacturer Part Number
BLF6G38-25,112
Description
IC WIMAX 3.8GHZ SOT608A
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G38S-25118.pdf
(13 pages)
Specifications of BLF6G38-25,112
Package / Case
SOT-608A
Transistor Type
LDMOS
Frequency
3.4GHz
Gain
15dB
Voltage - Rated
65V
Current Rating
8.2A
Current - Test
225mA
Voltage - Test
28V
Power - Output
4.5W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.58 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
2.1 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934061138112
BLF6G38-25
BLF6G38-25
BLF6G38-25
BLF6G38-25
NXP Semiconductors
10. Abbreviations
11. Revision history
Table 12.
BLF6G38-25_BLF6G38S-25_2
Product data sheet
Document ID
BLF6G38-25_BLF6G38S-25_2
Modifications:
BLF6G38-25_BLF6G38S-25_1
Revision history
Table 11.
Acronym
CCDF
CW
ESD
EVM
FCH
FFT
IBW
IS-95
LDMOS
N-CDMA
OFDMA
PAR
PUSC
RF
QAM
QPSK
SMD
VSWR
WCS
WiMAX
Release date Data sheet status
20081223
20080218
•
•
Abbreviations
Changed the maximum drain current and the maximum junction temperature in
Table 4 on page 2
Moved impedance information to
Description
Complementary Cumulative Distribution Function
Continuous Wave
ElectroStatic Discharge
Error Vector Magnitude
Frame Control Header
Fast Fourier Transform
Instantaneous BandWidth
Interim Standard 95
Laterally Diffused Metal-Oxide Semiconductor
Narrowband Code Division Multiple Access
Orthogonal Frequency Division Multiple Access
Peak-to-Average power Ratio
Partial Usage of SubChannels
Radio Frequency
Quadrature Amplitude Modulation
Quadrature Phase Shift Keying
Surface Mounted Device
Voltage Standing-Wave Ratio
Wireless Communications Service
Worldwide Interoperability for Microwave Access
Rev. 02 — 23 December 2008
Product data sheet
Preliminary data sheet -
BLF6G38-25; BLF6G38S-25
Section 8
Change notice Supersedes
-
WiMAX power LDMOS transistor
BLF6G38-25_BLF6G38S-25_1
-
© NXP B.V. 2008. All rights reserved.
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