BLF6G38-25,112 NXP Semiconductors, BLF6G38-25,112 Datasheet - Page 3

• Manufacturer Part Number: BLF6G38-25,112
• Description: IC WIMAX 3.8GHZ SOT608A
• Manufacturer: NXP Semiconductors

Specifications of BLF6G38-25,112

• Package / Case: SOT-608A
• Transistor Type: LDMOS
• Frequency: 3.4GHz
• Gain: 15dB
• Voltage - Rated: 65V
• Current Rating: 8.2A
• Current - Test: 225mA
• Voltage - Test: 28V
• Power - Output: 4.5W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.58 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 2.1 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061138112; BLF6G38-25; BLF6G38-25

NXP Semiconductors
6. Characteristics
7. Application information
BLF6G38-25_BLF6G38S-25_2
Product data sheet
7.1 Ruggedness in class-AB operation
Table 6.
T
Table 7.
Mode of operation: 1-carrier N-CDMA; single carrier IS-95 with pilot, paging, sync and 6 traffic
channels (Walsh codes 8 - 13); PAR = 9.7 dB at 0.01 % probability on the CCDF; channel
bandwidth is 1.2288 MHz; f
V
circuit.
[1]
The BLF6G38-25 and BLF6G38S-25 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
Symbol Parameter
V
V
I
I
I
g
R
C
Symbol
G
RL
ACPR
ACPR
DSS
DSX
GSS
j
DS
fs
DS
D
(BR)DSS
GS(th)
DS(on)
rs
p
= 25 C unless otherwise specified.
in
= 28 V; I
Measured within 30 kHz bandwidth.
= 28 V; I
885k
1980k
drain-source breakdown
voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
Characteristics
Application information
Dq
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio (885 kHz)
adjacent channel power ratio (1980 kHz) P
Dq
= 225 mA; T
= 225 mA; P
Rev. 02 — 23 December 2008
1
case
= 3400 MHz; f
L
= 25 C; unless otherwise specified, in a class-AB production
= P
BLF6G38-25; BLF6G38S-25
L(1dB)
; f = 3600 MHz.
Conditions
V
V
V
V
V
V
V
V
I
V
f = 1 MHz
2
D
GS
DS
GS
GS
DS
GS
DS
GS
GS
= 3500 MHz; f
= 1.4 A
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= +11 V; V
= V
= 0 V; V
GS(th)
GS(th)
D
DS
DS
D
D
Conditions
P
P
P
P
= 0.4 mA
+ 3.75 V;
+ 3.75 V;
L(AV)
L(AV)
L(AV)
L(AV)
L(AV)
= 40 mA
= 1.4 A
DS
= 28 V
= 28 V;
3
= 3600 MHz; RF performance at
WiMAX power LDMOS transistor
= 0 V
= 4.5 W
= 4.5 W
= 4.5 W
= 4.5 W
= 4.5 W
Min
65
1.4
-
6
-
-
-
-
[1]
[1]
Min Typ Max Unit
12.5 15
-
22
-
-
Typ
-
2
-
8.2
-
2.8
0.37
0.59
© NXP B.V. 2008. All rights reserved.
24
10 -
45
61
Max
-
2.4
1.5
-
150
-
0.58
-
-
-
40 dBc
56 dBc
3 of 13
Unit
V
V
A
nA
S
pF
dB
dB
%
A