BLF6G27-45,112 NXP Semiconductors, BLF6G27-45,112 Datasheet - Page 8
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BLF6G27-45,112
Manufacturer Part Number
BLF6G27-45,112
Description
IC WIMAX 2.7GHZ SOT608A
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G27S-45118.pdf
(16 pages)
Specifications of BLF6G27-45,112
Package / Case
SOT-608A
Transistor Type
LDMOS
Frequency
2.7GHz
Gain
18dB
Voltage - Rated
65V
Current Rating
20A
Current - Test
350mA
Voltage - Test
28V
Power - Output
7W
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.385 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
- 0.5 V, 13 V
Continuous Drain Current
20 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934060908112
BLF6G27-45
BLF6G27-45
BLF6G27-45
BLF6G27-45
NXP Semiconductors
BLF6G27-45_BLF6G27S-45_3
Product data sheet
Fig 10. Power gain and drain efficiency as functions of
(dB)
G
p
18
17
16
15
14
13
2500
V
PAR = 9.7 dB at 0.01 % probability;
instantaneous bandwidth = 30 kHz.
frequency; typical values
DS
= 28 V; I
G
7.6 Single carrier N-CDMA broadband performance at 20 W average
D
p
2550
Dq
= 350 mA; single carrier N-CDMA;
2600
2650
f (MHz)
001aah414
Rev. 03 — 15 December 2008
2700
45
43
41
39
37
35
(%)
D
BLF6G27-45; BLF6G27S-45
Fig 11. Adjacent channel power ratio as function of
ACPR
(dBc)
(1) Low frequency component
(2) High frequency component
30
40
50
60
2500
V
PAR = 9.7 dB at 0.01 % probability;
instantaneous bandwidth = 30 kHz.
frequency; typical values
DS
(1)
(2)
(1)
(2)
(1)
(2)
= 28 V; I
2550
Dq
WiMAX power LDMOS transistor
= 350 mA; single carrier N-CDMA;
2600
2650
ACPR
ACPR
ACPR
© NXP B.V. 2008. All rights reserved.
f (MHz)
001aah415
1500k
1980k
885k
2700
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