BLF6G10LS-135R,112 NXP Semiconductors, BLF6G10LS-135R,112 Datasheet
BLF6G10LS-135R,112
Specifications of BLF6G10LS-135R,112
BLF6G10LS-135R
BLF6G10LS-135R
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BLF6G10LS-135R,112 Summary of contents
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... BLF6G10LS-135R Power LDMOS transistor Rev. 01 — 17 November 2008 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 0.01 % probability on CCDF per carrier; ...
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... RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 800 MHz to 1000 MHz frequency range 2. Pinning information Table 2. Pin [1] Connected to flange. 3. Ordering information Table 3. Type number BLF6G10LS-135R - 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg ...
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... RF performance at V class-AB production test circuit. Symbol P L(AV ACPR 7.1 Ruggedness in class-AB operation The BLF6G10LS-135R is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 950 mA BLF6G10LS-135R_1 Product data sheet Characteristics Conditions drain-source breakdown V voltage gate-source threshold voltage ...
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... 950 mA 881 MHz One-tone CW power gain and drain efficiency as function of load power; typical values 001aah865 60 IMD D (%) (dBc 100 P (W) L(PEP) = 881 MHz ( 100 kHz). 1 Fig 3. Rev. 01 — 17 November 2008 BLF6G10LS-135R Power LDMOS transistor 001aah864 75 D (%) 120 160 P ( 950 mA 881 MHz ( 100 kHz). ...
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... ACPR (dBc (W) L(AV) = 881 MHz 886 MHz Fig C12 Rev. 01 — 17 November 2008 BLF6G10LS-135R Power LDMOS transistor L(AV 950 mA 881 MHz carrier spacing 5 MHz. 2-carrier W-CDMA adjacent power channel ratio as a function of average load power; typical values C9 C10 C11 C18 R3 ...
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... 800 -1000 MHz V1.0 Figure 6 and 7). Value 100 nF 4 3.0 pF 220 9.1 ; 0.1 W Rev. 01 — 17 November 2008 BLF6G10LS-135R Power LDMOS transistor C18 C10 C11 C6 C7 C19 C14 C15 C12 C13 OUT 800 -1000 MHz V1.0 = 3.5 and thickness = 0.76 mm. ...
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... REFERENCES JEDEC JEITA Rev. 01 — 17 November 2008 BLF6G10LS-135R Power LDMOS transistor 1.70 20.70 9.91 0.25 1.45 20.45 9.65 0.067 0.815 0.390 0.010 0.057 ...
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... Power of the Dedicated Physical CHannel Radio Frequency Voltage Standing-Wave Ratio Wideband Code Division Multiple Access Release date Data sheet status 20081117 Product data sheet Rev. 01 — 17 November 2008 BLF6G10LS-135R Power LDMOS transistor Change notice Supersedes - - © NXP B.V. 2008. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 17 November 2008 BLF6G10LS-135R Power LDMOS transistor © NXP B.V. 2008. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF6G10LS-135R_1 All rights reserved. Date of release: 17 November 2008 ...